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Электронный компонент: BU2520AX

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 6.0 A; I
B
= 1.2 A
-
5.0
V
I
Csat
Collector saturation current
6.0
-
A
t
f
Fall time
I
Csat
= 6.0 A; I
B(end)
= 0.85 A
0.2
0.35
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
I
B
Base current (DC)
-
6
A
I
BM
Base current peak value
-
9
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
150
mA
-I
BM
Reverse base current peak value
1
-
6
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
T
stg
Storage temperature
-55
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
case
1 2 3
b
c
e
1 Turn-off current.
September 1997
1
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 6.0 A; I
B
= 1.2 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 6.0 A; I
B
= 1.2 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
13
-
h
FE
I
C
= 6 A; V
CE
= 5 V
5
7
9.5
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
115
-
pF
Switching times (32 kHz line
I
Csat
= 6.0 A; L
C
= 330
H; C
fb
= 9 nF;
deflection circuit)
I
B(end)
= 0.85 A; L
B
= 3.45
H;
-V
BB
= 4 V; (-dI
B
/dt = 1.2 A /
s)
t
s
Turn-off storage time
3.0
4.0
s
t
f
Turn-off fall time
0.2
0.35
s
Switching times (16 kHz line
I
Csat
= 6.0 A; L
C
= 650
H; C
fb
= 19 nF;
deflection circuit)
I
B(end)
= 1.0 A; L
B
= 5.3
H; -V
BB
= 4 V;
(-dI
B
/dt = 0.8 A /
s)
t
s
Turn-off storage time
4.5
5.5
s
t
f
Turn-off fall time
0.35
0.5
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms (16 kHz).
Fig.4. Switching times waveforms (32 kHz).
Fig.5. Switching times definitions.
Fig.6. Switching times test circuit.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
IC
IB
VCE
ICsat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
September 1997
3
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
Fig.7. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.10. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.11. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.12. Typical turn-off losses. T
j
= 85C
Eoff = f (I
B
); parameter I
C
; parameter frequency
0.1
10
IC / A
hFE
100
10
1
1
100
Tj = 25 C
Tj = 125 C
5 V
1 V
0
1
2
3
4
IB / A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IC / A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1
1
10
IB / A
VCESAT / V
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0.1
10
IC / A
VCESAT / V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
100
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1
1
10
IB / A
Eoff / uJ
1000
100
10
IC = 6 A
5 A
16 kHz
32 kHz
September 1997
4
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
Fig.13. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 16 kHz
Fig.14. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 32 kHz
Fig.15. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
Fig.16. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0.1
1
10
IB / A
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
16 kHz
ts
tf
IC =
6 A
5 A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.1
1
10
IB / A
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
IC =
6 A
5 A
ts
tf
32 kHz
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
t
D
10
1
0.1
0.01
0.001
September 1997
5
Rev 2.200