Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 8.0 A; I
B
= 1.6 A
-
5.0
V
I
Csat
Collector saturation current
8.0
-
A
t
f
Fall time
I
Csat
= 8.0 A; I
B(end)
= 1.1 A
0.2
0.35
s
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
I
B
Base current (DC)
-
8
A
I
BM
Base current peak value
-
12
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
200
mA
-I
BM
Reverse base current peak value
1
-
7
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
1
2
3
case
b
c
e
1 Turn-off current.
September 1997
1
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 8.0 A; I
B
= 1.6 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 8.0 A; I
B
= 1.6 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
13
-
h
FE
I
C
= 8 A; V
CE
= 5 V
5
7
9.5
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
145
-
pF
Switching times (32 kHz line
I
Csat
= 8.0 A; L
C
= 260
H; C
fb
= 13 nF;
deflection circuit)
I
B(end)
= 1.1 A; L
B
= 2.5
H; -V
BB
= 4 V;
(-dI
B
/dt = 1.6 A/
s)
t
s
Turn-off storage time
3.0
4.0
s
t
f
Turn-off fall time
0.2
0.35
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AF
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
IC
IB
VCE
ICsat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
0.1
10
IC / A
hFE
BU2525AF
100
10
1
1
100
Tj = 25 C
Tj = 125 C
5 V
1 V
September 1997
3
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses. T
j
= 85C
Eoff = f (I
B
); parameter I
C
; f = 32 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 32 kHz
0.1
1
10
IC / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1
1
10
IB / A
VCESAT / V
BU2525AF
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0.1
10
IC / A
VCESAT / V
BU2525AF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
1
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1
1
10
IB / A
Eoff / uJ
BU2525AF
1000
100
10
IC = 8 A
7 A
0
1
2
3
4
IB / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IB / A
ts, tf / us
BU2525AF
12
11
10
9
8
7
6
5
4
3
2
1
0
32 kHz
ts
tf
IC =
8 A
7 A
September 1997
4
Rev 1.400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AF
Fig.13. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
Fig.14. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.15. Forward bias safe operating area. T
hs
= 25 C
I
CDC
& I
CM
= f(V
CE
); I
CM
single pulse; parameter t
p
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2525AF
IC / A
100
10
1
0.1
0.01
1
10
100
1000 VCE / V
100 us
1 ms
10 ms
DC
40 us
tp =
Ptot
ICM
ICDC
= 0.01
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
t
D
D = 0
0.02
0.05
0.1
0.2
0.5
September 1997
5
Rev 1.400
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