Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
16
A
I
CM
Collector current peak value
-
40
A
P
tot
Total power dissipation
T
mb
25 C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 9.0 A; I
B
= 1.64 A
-
5.0
V
I
Csat
Collector saturation current
9
-
A
t
s
Storage time
I
Csat
= 9.0 A; I
B(end)
= 1.3 A
3.5
4.5
s
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
heat
collector
sink
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
16
A
I
CM
Collector current peak value
-
40
A
I
B
Base current (DC)
-
10
A
I
BM
Base current peak value
-
15
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
200
mA
-I
BM
Reverse base current peak value
1
-
10
A
P
tot
Total power dissipation
T
mb
25 C
-
125
W
T
stg
Storage temperature
-55
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
-
1.0
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
1
2
3
b
c
e
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Base-emitter breakdown voltage
I
B
= 1 mA
7.5
14
-
V
V
CEsat
Collector-emitter saturation voltage
I
C
= 9.0 A; I
B
= 1.64 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 9.0 A; I
B
= 1.64 A
-
-
1.0
V
h
FE
DC current gain
I
C
= 1 A; V
CE
= 5 V
-
17
-
h
FE
I
C
= 9 A; V
CE
= 5 V
5.5
8
10
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (32 kHz line
I
Csat
= 9.0 A; L
C
= 200
H; C
fb
= 13 nF;
deflection dynamic test circuit).
V
CC
= 138 V; I
B(end)
= 1.3 A;
-I
BM
= 4.5 A; -V
BB
= 4 V; L
B
= 1
H
t
s
Turn-off storage time
3.5
4.5
s
t
f
Turn-off fall time
0.14
0.25
s
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
IC
IB
VCE
ICsat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
Fig.3. Switching times test circuit.
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical turn-off losses.
P
TOT
= f (I
B
); parameter I
C
; f = 32 kHz
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
100
0.01
0.1
1
10
VCEsat / V
BU2530/2AL
IC / A
IC/IB = 10
IC/IB = 5
Tj = 85 C
Tj = 25 C
0.01
0.1
1
10
100
1
10
100
hFE
BU2530/2AL
IC / A
VCE = 1 V
Tj = 85 C
Tj = 25 C
0
1
2
3
4
0.6
0.7
0.8
0.9
1
VBEsat / V
BU2530/2AL
IC = 9 A
IC = 7 A
IB / A
Tj = 85 C
Tj = 25 C
0.01
0.1
1
10
100
1
10
100
hFE
BU2530/2AL
IC / A
VCE = 5 V
Tj = 85 C
Tj = 25 C
0
1
2
3
4
1
10
100
PTOT / W
BU2530AL
IB / A
Tj = 85 C
Tj = 25 C
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
Fig.9. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 32 kHz
Fig.10. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
Fig.11. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.12. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 5 V;
L
C
= 1.5 mH; V
CL
= 1450 V; L
B
= 1 - 3
H;
C
FB
= 1 - 10 nF; I
B(end)
= 1.3 - 2.6 A
Fig.13. Reverse bias safe operating area. T
j
T
jmax
0
1
2
3
4
0
2
4
6
8
10
ts/tf / us
BU2530AL
IB / A
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
BU2530/32AL
100
1000
1500
0
10
20
30
40
IC / A
VCE / V
Area where
fails occur
1.0E-06
1E-04
1E-02
1E+00
0.001
0.01
0.1
1
10
0.2
0.1
0.05
0.02
0.5
D = 0
Zth / K/W
BU2530AL/32AL
t / s
D =
t
p
t
p
T
T
P
t
D
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
MECHANICAL DATA
Dimensions in mm
Net Mass: 9 g
Fig.14. SOT430; pin 2 connected to mounting base.
6.0
10.0
2.5
25.5
19.5
min
0.8
3.1
20.5 max
5.45 5.45
2.5 max
26.5
1.0
3.5 max
3.5
3.0 max
0.8 max
5.3 max
seating
plane
0.4 M
4.0
3.0
3.0
3.0
1.5
1.5
September 1997
5
Rev 1.200
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