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Электронный компонент: BU2708AF/DF

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
GENERAL DESCRIPTION
High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current
load variations, resulting in a low worst-case dissipation. Designed to withstand V
CES
pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
4
-
A
t
s
Storage time
I
Csat
= 4 A; f = 16 kHz
4.8
5.5
s
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
BM
Reverse base current peak value
1
-
5
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
)
1
2
3
case
b
c
e
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 6 V; I
C
= 0 A
-
-
70
A
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
825
900
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
0.83
0.91
1.00
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
21
-
h
FE
I
C
= 4 A; V
CE
= 1 V
3
6
7.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (line deflection
I
Csat
= 4 A; I
B(end)
= 0.8 A; -I
BM
= I
CM
/2;
circuit 16 kHz)
L
B
= 6
H; -V
BB
= 4 V; L
C
= 1 mH;
C
FB
= 12.2 nF
t
s
Turn-off storage time
4.8
5.5
s
t
f
Turn-off fall time
0.4
0.52
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
0.01
0.1
1
10
100
1
10
100
hFE
BU2708AF
IC / A
Ths = 25 C
Ths = 85 C
VCE = 5 V
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.10. Limit P
tot
; T
j
= 85C
P
tot
= f (I
B(end)
); I
C
= 3.5 A; f = 16 kHz
Fig.11. Limit P
tot
; T
j
= 85C
P
tot
= f (I
B(end)
); I
C
= 4.0 A; f = 16 kHz
Fig.12. Limit storage and fall time.
t
s
= f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 16 kHz
0.01
0.1
1
10
100
1
10
100
hFE
BU2708AF
IC / A
Ths = 25 C
Ths = 85 C
VCE = 1 V
0
0.5
1
1.5
2
1
10
PTOT / W
BU2708AF/DF
IB / A
IC = 3.5 A
f = 16 kHz
Tj = 85 C
0.1
1
10
100
0.01
0.1
1
10
Tj = 85 C
Tj = 25 C
IC/IB = 8
IC/IB = 4
VCEsat / V
IC / A
BU2708AF
0
0.5
1
1.5
2
1
10
PTOT / W
BU2708AF/DF
IB / A
IC = 4 A
f = 16 kHz
Tj = 85 C
0
0.5
1
1.5
2
0.6
0.7
0.8
0.9
1
1.1
1.2
Tj = 25 C
Tj = 85 C
VBEsat / V
BU2708AF
IB / A
IC = 4A
3A
0
0.5
1
1.5
2
0
2
4
6
8
10
ts/tf / us
BU2708AF/DF
IC = 3.5A
IC = 4A
IB / A
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
Fig.13. Normalised power dissipation.
PD% = 100
PD/PD 25C = f (T
hs
)
Fig.14. Transient thermal impedance.
Z
th
j-hs
= f(t); parameter D = t
p
/T
Fig.15. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 4 V;
L
C
= 1 mH; V
CL
= 1500 V; L
B
= 1 - 3
H;
C
FB
= 1 - 4 nF; I
B(end)
= 0.8 - 4 A
Fig.16. Reverse bias safe operating area. T
j
T
jmax
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
1.0E-06
1E-04
1E-02
1E+00
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU2708AF/DF
tp / sec
Zth / K/W
D =
D =
t
p
t
p
T
T
P
t
D
100
1000
0
2
4
6
8
10
12
14
16
VCE / V
IC / A
BU2708AF/DF
Area where
Fails occur
1700
September 1997
5
Rev 1.200