DATA SHEET
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
DISCRETE SEMICONDUCTORS
BU505F; BU505DF
Silicon diffused power transistors
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
APPLICATIONS
Horizontal deflection circuits of
colour television receivers.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
mounting base; electrically
isolated from all pins
Fig.1 Simplified outline (SOT186) and symbols.
a. BU505F.
b. BU505DF.
MBC668
1
2
3
Front view
3
2
1
MBB008
3
2
1
MBB077
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30
5 N force on centre of package.
2. Mounted with heatsink compound and 30
5 N force on centre of package.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
-
1500
V
V
CEO
collector-emitter voltage
open base
-
700
V
V
CEsat
collector-emitter saturation
voltage
I
C
= 2 A; I
B
= 900 mA; see Fig.8
-
1
V
V
F
diode forward voltage
(BU505DF)
I
F
= 2 A
-
1.8
V
I
Csat
collector saturation current
-
2
A
I
C
collector current (DC)
see Figs 4 and 5
-
2.5
A
I
CM
collector current (peak value)
see Figs 4 and 5
-
4
A
P
tot
total power dissipation
T
h
25
C; see Fig.2
-
20
W
t
f
fall time
inductive load; see Fig.10
0.7
-
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
6.35
K/W
note 2
3.85
K/W
R
th j-a
thermal resistance from junction to ambient
55
K/W
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
ISOLATION CHARACTERISTICS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
isolation voltage from all terminals to external heatsink (peak value)
-
1500
V
C
isol
isolation capacitance from collector to external heatsink
12
-
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
-
1500
V
V
CEO
collector-emitter voltage
open base
-
700
V
I
Csat
collector saturation current
-
2
A
I
C
collector current (DC)
see Figs 4 and 5
-
2.5
A
I
CM
collector current (peak value)
see Figs 4 and 5
-
4
A
I
B
base current (DC)
-
2
A
I
BM
base current (peak value)
-
4
A
P
tot
total power dissipation
T
h
25
C; see Fig.2
-
20
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
Fig.2 Power derating curve.
handbook, halfpage
0
50
Th (
o
C)
100
150
120
0
40
80
MGK674
Ptot max
(%)
Fig.3 DC current gain; typical values.
T
j
= 25
C.
(1) V
CE
= 5 V.
(2) V
CE
= 1 V.
handbook, halfpage
10
-
2
10
-
1
1
10
2
10
1
hFE
IC (A)
10
MGB875
(1)
(2)
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 0.1 A; I
B
= 0; L = 25 mH;
see Figs 6 and 7
700
-
-
V
V
CEsat
collector-emitter saturation voltage
I
C
= 2 A; I
B
= 900 mA;
see Fig.8
-
-
1
V
V
BEsat
base-emitter saturation voltage
I
C
= 2 A; I
B
= 900 mA;
see Fig.9
-
-
1.3
V
V
F
diode forward voltage (BU505DF)
I
F
= 2 A
-
-
1.8
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESmax
; V
BE
= 0;
note 1
-
-
0.15
mA
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
1
mA
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
1
mA
h
FE
DC current gain
see Fig.3
V
CE
= 5 V; I
C
= 2 A
2.22
-
-
V
CE
= 5 V; I
C
= 100 mA
6
13
30
f
T
transition frequency
V
CE
= 5 V; I
C
= 100 mA;
f = 1 MHz
-
7
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0;
f = 1 MHz
-
65
-
pF
Switching times in horizontal deflection circuit (see Fig.4)
t
s
storage time
I
CM
= 2 A; I
B(end)
= 900 mA;
V
dr
=
-
4 V
L
B
= 10
H
-
6.5
-
s
L
B
= 15
H
-
7.5
-
s
L
B
= 25
H
-
9.5
-
s
t
f
fall time
I
CM
= 2 A; I
B(end)
= 900 mA;
V
dr
=
-
4 V
L
B
= 10
H
-
0.9
-
s
L
B
= 15
H
-
0.9
-
s
L
B
= 25
H
-
0.85
-
s
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
Fig.4 Forward bias SOAR.
Mounted without heatsink compound and 30
5 N force on centre of package.
T
h
= 25
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB931
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
-
1
10
2
10
-
2
10
-
4
10
-
3
IC
(A)
ICM max
IC max
II
PDF 
ZIP