DATA SHEET
Product specification
August 1998
DISCRETE SEMICONDUCTORS
BUJ204AX
Silicon Diffused Power Transistor
August 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
850
V
V
CBO
Collector-Base voltage (open emitter)
-
850
V
V
CEO
Collector-emitter voltage (open base)
-
450
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
10
A
P
tot
Total power dissipation
T
hs
25 C
-
32
W
V
CEsat
Collector-emitter saturation voltage
0.29
1.5
V
h
FEsat
DC current gain
I
C
= 4 A; V
CE
= 5 V
12
-
t
f
Fall time
Ic=2.5A,I
B1
=0.5A
88
150
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE
= 0 V
-
850
V
V
CEO
Collector to emitter voltage (open base)
-
450
V
V
CBO
Collector to base voltage (open emitter)
-
850
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
10
A
I
B
Base current (DC)
-
2
A
I
BM
Base current peak value
-
4
A
P
tot
Total power dissipation
T
hs
25 C
-
32
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
3.95
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
1 2 3
case
b
c
e
August 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
CBO
Collector cut-off current
1
V
CBO
= V
CESMmax
(850V)
-
-
0.1
mA
I
CEO
V
CEO
= V
CEOMmax
(450V)
-
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB
= 9 V; I
C
= 0 A
-
-
0.1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
450
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
0.29
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
1.01
1.3
V
h
FE
DC current gain
I
C
= 5 mA; V
CE
= 5 V
10
19
35
h
FE
I
C
= 500 mA; V
CE
= 5 V
14
25
35
h
FEsat
DC current gain
I
C
= 2.5 A; V
CE
= 5 V
14.5
17
19.5
I
C
= 4 A; V
CE
= 5 V
-
12
-
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con
= 2.5 A; I
Bon
= -I
Boff
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
t
on
Turn-on time
0.57
0.8
s
t
s
Turn-off storage time
3.4
4
s
t
f
Turn-off fall time
0.34
0.47
s
Switching times (inductive load)
I
Con
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
H;
-V
BB
= 5 V
t
s
Turn-off storage time
1.37
1.5
s
t
f
Turn-off fall time
88
150
ns
Switching times (inductive load)
I
Con
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
H;
-V
BB
= 5 V; T
j
= 100 C
t
s
Turn-off storage time
-
1.6
s
t
f
Turn-off fall time
-
200
ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204AX
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
s;
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
V
CC
= 300 V; -V
BE
= 5 V; L
C
= 200 uH; L
B
= 1 uH
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
LB
IBon
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
ICon
IBon
-IBoff
t
t
ts
tf
toff
10 %
90 %
August 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204AX
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
hs
)
Fig.8. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
=25C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Ths / C
%
Normalised Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
P tot
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
IC/A
VBEsat/V
0.01
1
100
10
1
0.1
10
h
FE
IC / A
Tj = 25 C
1V
5V
0.0
0.1
0.2
0.3
0.4
0.5
0.1
1
10
IC/A
VCEsat/V
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
1u
100u
10m
1
100
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
D=0
0.5
0.2
0.1
0.05
0.02
10u
1m
100m
10
D =
tp
T
T
P
t
D
t
p
BU1706AX
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