Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - TO220AB
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1000
V
V
CBO
Collector-Base voltage (open emitter)
-
1000
V
V
CEO
Collector-emitter voltage (open base)
-
500
V
I
C
Collector current (DC)
-
2
A
I
CM
Collector current peak value
-
3
A
P
tot
Total power dissipation
T
mb
25 C
-
50
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 1.0 A;I
B
= 0.2 A
-
1.0
V
t
f
Fall time
Ic=1A,I
B1
=0.2A
145
160
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE
= 0 V
-
1000
V
V
CEO
Collector to emitter voltage (open base)
-
500
V
V
CBO
Collector to base voltage (open emitter)
-
1000
V
I
C
Collector current (DC)
-
2
A
I
CM
Collector current peak value
-
3
A
I
B
Base current (DC)
-
0.75
A
I
BM
Base current peak value
-
1
A
P
tot
Total power dissipation
T
mb
25 C
-
50
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
2.5
K/W
R
th j-a
Junction to ambient
in free air
70
-
K/W
1 2 3
tab
b
c
e
August 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
0.2
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
1.5
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 5 V; I
C
= 0 A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
500
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 1 A; I
B
= 0.2 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 1 A; I
B
= 0.2 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 5 V
15
-
35
I
C
= 100 mA; V
CE
= 5 V
14
-
35
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con
= 1.0 A; I
Bon
= -I
Boff
= 0.2 A;
R
L
= 75 ohms; V
BB2
= 4 V;
t
on
Turn-on time
-
1.0
s
t
s
Turn-off storage time
-
4.0
s
t
f
Turn-off fall time
-
0.8
s
Switching times (inductive load)
I
Con
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
H;
-V
BB
= 5 V
t
s
Turn-off storage time
-
1.4
s
t
f
Turn-off fall time
145
160
ns
Switching times (inductive load)
I
Con
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
H;
-V
BB
= 5 V; T
j
= 100 C
t
s
Turn-off storage time
-
1.5
s
t
f
Turn-off fall time
-
200
ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
August 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1998
4
Rev 1.000
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