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Электронный компонент: BUK106-50S

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK106-50L/S
Logic level TOPFET
BUK106-50LP/SP
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
SYMBOL
PARAMETER
MAX.
UNIT
overload protected logic level power
MOSFET in a 5 pin plastic
V
DS
Continuous drain source voltage
50
V
envelope, intended as a general
I
D
Continuous drain current
50
A
purpose switch for automotive
P
tot
Total power dissipation
125
W
systems and other applications.
T
j
Continuous junction temperature
150
C
R
DS(ON)
Drain-source on-state resistance
APPLICATIONS
V
IS
= 5 V
35
m
V
IS
= 8 V
28
m
General controller for driving
lamps
SYMBOL
PARAMETER
NOM.
UNIT
motors
solenoids
V
PSN
Protection supply voltage
heaters
BUK106-50L
5
V
BUK106-50S
10
V
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible
Fig.1. Elements of the TOPFET.
PINNING - SOT263
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
flag
3
drain
4
protection supply
5
source
Fig. 2. Type numbers ending with
suffix P refer to leadform 263-01.
Fig. 3.
tab
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
PROTECTION SUPPLY
FLAG
leadform
tab
1 2 3 4 5
263-01
D
S
I
TOPFET
P
F
P
February 1993
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK106-50L/S
Logic level TOPFET
BUK106-50LP/SP
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Voltages
V
DSS
Continuous off-state drain source
V
IS
= 0 V
-
50
V
voltage
1
V
IS
Continuous input voltage
-
0
11
V
V
FS
Continuous flag voltage
-
0
11
V
V
PS
Continuous supply voltage
-
0
11
V
Currents
V
IS
=
-
8
5
V
I
D
Continuous drain current
T
mb
25 C
-
50
45
A
I
D
Continuous drain current
T
mb
100 C
-
31
28
A
I
DRM
Repetitive peak on-state drain current
T
mb
25 C
-
200 180
A
Thermal
P
tot
Total power dissipation
T
mb
= 25 C
-
125
W
T
stg
Storage temperature
-
-55
150
C
T
j
Junction temperature
2
continuous
-
150
C
T
sold
Lead temperature
during soldering
-
250
C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply
An n-MOS transistor turns on
For internal overload protection to
connected, TOPFET can protect
between the input and source to
remain latched while the control
itself from two types of overload -
quickly discharge the power
circuit is high, external series input
over temperature and short circuit
MOSFET gate capacitance.
resistance must be provided. Refer
load.
to INPUT CHARACTERISTICS.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
IS
=
8
5
-
V
V
PSP
Protection supply voltage
3
for valid protection
BUK106-50L
4.4
4
-
V
BUK106-50S
5.4
5
-
V
Over temperature protection
V
PS
= V
PSN
V
DDP(T)
Protected drain source supply voltage
V
IS
= 10 V; R
I
2 k
-
50
V
V
IS
= 5 V; R
I
1 k
-
50
V
Short circuit load protection
V
PS
= V
PSN
; L
10
H
V
DDP(P)
Protected drain source supply voltage
4
V
IS
= 10 V; R
I
2 k
-
24
V
V
IS
= 5 V; R
I
1 k
-
45
V
P
DSM
Instantaneous overload dissipation
-
4
kW
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3 The minimum supply voltage required for correct operation of the overload protection circuits.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
February 1993
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK106-50L/S
Logic level TOPFET
BUK106-50LP/SP
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DRRM
Repetitive peak clamping drain current R
IS
100
1
-
50
A
E
DSM
Non-repetitive inductive turn-off
I
DM
= 27 A; R
IS
100
-
1
J
energy
2
E
DRM
Repetitive inductive turn-off energy
R
IS
100
; T
mb
85 C;
-
80
mJ
I
DM
= 16 A; V
DD
20 V;
f = 250 Hz
I
DIRM
Repetitive peak drain to input current
3
R
IS
= 0
; t
p
1 ms
-
50
mA
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
= 25 C;
-
50
A
V
IS
= V
PS
= V
FS
= 0 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
Junction to mounting base
-
-
0.8
1.0
K/W
R
th j-a
Junction to ambient
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSR
Drain-source clamping voltage
R
IS
= 100
; I
D
= 10 mA
50
-
65
V
V
(CL)DSR
Drain-source clamping voltage
R
IS
= 100
; I
DM
= 1 A; t
p
300
s;
50
-
70
V
0.01
I
DSS
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
-
0.5
10
A
I
DSR
Drain source leakage current
V
DS
= 50 V; R
IS
= 100
;
-
1
20
A
I
DSR
Drain source leakage current
V
DS
= 40 V; R
IS
= 100
;
T
j
= 125 C
-
10
100
A
R
DS(ON)
Drain-source on-state
I
DM
= 25 A;
V
IS
= 8 V
-
22
28
m
resistance
t
p
300
s;
0.01
V
IS
= 5 V
-
28
35
m
1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to
become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.
2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at
energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source
voltage becoming positive.
February 1993
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK106-50L/S
Logic level TOPFET
BUK106-50LP/SP
OVERLOAD PROTECTION CHARACTERISTICS
With adequate protection supply
Provided there is adequate input
Refer also to OVERLOAD
voltage TOPFET detects when one
series resistance it switches off
PROTECTION LIMITING VALUES
of the overload thresholds is
and remains latched off until reset
and INPUT CHARACTERISTICS.
exceeded.
by the protection supply pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load protection
1
V
PS
= V
PSN
2
; T
mb
= 25 C; L
10
H
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 10 V
-
550
-
mJ
t
d sc
Response time
V
DD
= 13 V; V
IS
= 10 V
-
0.4
-
ms
Over temperature protection
V
PS
= V
PSN
T
j(TO)
Threshold junction temperature from I
D
2.5 A
3
150
-
-
C
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS
= 12 V; I
DM
= 25 A t
p
300
s;
17
28
-
S
0.01
I
D
Drain current
4
V
DS
= 13 V;
V
IS
= 5 V
-
80
-
A
V
IS
= 10 V
160
-
A
PROTECTION SUPPLY CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Protection supply
I
PS
,
Protection supply current
normal operation or
I
PSL
protection latched
BUK106-50L
V
PS
= 5 V
-
0.2
0.35
mA
BUK106-50S
V
PS
= 10 V
-
0.4
1.0
mA
V
PSR
Protection reset voltage
5
1.5
2.5
3.5
V
T
j
= 150 C
1.0
-
-
V
V
(CL)PS
Protection clamp voltage
I
P
= 1.35 mA
11
13
-
V
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
Forward voltage
I
S
= 20 A; V
IS
= V
PS
= V
FS
= 0 V;
-
0.9
1.2
V
t
p
= 300
s
t
rr
Reverse recovery time
not applicable
6
-
-
-
-
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum.
2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA.
3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS.
5 The supply voltage below which the overload protection circuits will be reset.
6 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
February 1993
4
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK106-50L/S
Logic level TOPFET
BUK106-50LP/SP
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Normal operation
V
IS(TO)
Input threshold voltage
V
DS
= 5 V; I
D
= 1 mA
1.0
1.5
2.0
V
T
mb
= 150 C
0.5
-
-
V
I
IS
Input current
V
IS
= 10 V
-
10
100
nA
V
(CL)IS
Input clamp voltage
I
I
= 1 mA
11
13
-
V
Overload protection latched
R
ISL
Input resistance
1
V
PS
= 5 V
I
I
= 5 mA;
-
55
-
T
mb
= 150 C
-
95
-
V
PS
= 10 V
I
I
= 5 mA;
-
35
-
T
mb
= 150 C
-
60
-
Application information
External input resistances for
(see figure 29)
R
IS
internal overvoltage clamping
2
R
I
=
;
V
DS
> 30 V
100
-
-
R
I
internal overload protection
3
R
IS
=
;
V
II
= 5 V
1
-
-
k
V
II
= 10 V
2
-
-
k
SWITCHING CHARACTERISTICS
T
mb
= 25 C; R
I
= 50
; R
IS
= 50
(see figure 29); resistive load R
L
= 10
. For waveforms see figure 28.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
DD
= 15 V; V
IS
: 0 V
10 V
-
10
-
ns
t
r
Rise time
-
35
-
ns
t
d off
Turn-off delay time
V
DD
= 15 V; V
IS
: 10 V
0 V
-
280
-
ns
t
f
Fall time
-
120
-
ns
CAPACITANCES
T
mb
= 25 C; f = 1 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
DS
= 25 V; V
IS
= 0 V
-
1250
1800
pF
C
oss
Output capacitance
V
DS
= 25 V; V
IS
= 0 V
-
650
1000
pF
C
rss
Reverse transfer capacitance
V
DS
= 25 V; V
IS
= 0 V
-
150
250
pF
C
pso
Protection supply pin
V
PS
= 10 V
-
30
-
pF
capacitance
C
fso
Flag pin capacitance
V
FS
= 10 V; V
PS
= 0 V
-
20
-
pF
1 The resistance of the internal transistor which discharges the power MOSFET gate capacitance when overload protection operates.
The external drive circuit should be such that the input voltage does not exceed V
IS(TO)
minimum when the overload protection has
operated. Refer also to figure for latched input characteristics.
2 Applications using a lower value for R
IS
would require external overvoltage protection.
3 For applications requiring a lower value for R
I
, an external overload protection strategy is possible using the flag pin to `tell' the control circuit to
switch off the input.
February 1993
5
Rev 1.200