Philips Semiconductors
Product specification
PowerMOS transistor
BUK107-50GL
Logic level TOPFET
DESCRIPTION
QUICK REFERENCE DATA
Monolithic overload protected logic
SYMBOL
PARAMETER
MAX.
UNIT
level power MOSFET in a surface
mount plastic envelope, intended as
V
DS
Continuous drain source voltage
50
V
a general purpose switch for
automotive systems and other
I
D
Continuous drain current
0.5
A
applications.
P
D
Total power dissipation
1.8
W
APPLICATIONS
T
j
Continuous junction temperature
150
C
General controller for driving
lamps
R
DS(ON)
Drain-source on-state resistance
200
m
small motors
solenoids
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Overload protected up to
85C ambient
Overload protection by current
limiting and overtemperature
sensing
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
4
drain (tab)
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
4
1
2
3
P
D
S
I
TOPFET
April 1998
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK107-50GL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Continuous drain source voltage
1
-
-
50
V
I
D
Continuous drain current
2
-
-
self limiting
A
I
I
Continuous input current
clamping
-
3
mA
I
IRM
Non-repetitive peak input current
t
p
1 ms
-
10
mA
P
D
Total power dissipation
T
amb
= 25 C
-
1.8
W
T
stg
Storage temperature
-
-55
150
C
T
j
Continuous junction temperature
normal operation
3
-
150
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
DSM
Non-repetitive clamping energy
T
b
25 C; I
DM
< I
D(lim)
;
-
100
mJ
inductive load
E
DRM
Repetitive clamping energy
T
b
75 C; I
DM
= 50 mA;
-
4
mJ
f = 250 Hz
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads.
Overload protection operates by means of drain current limiting and activating the overtemperature protection.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DDP
Protected drain source supply voltage
V
IS
= 5 V
-
35
V
V
IS
= 4 V
-
16
V
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when there is an overload fault condition.
It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
I
D(lim)
Drain current limiting
V
IS
= 5 V
0.5
1.1
1.5
A
Overtemperature protection
only in drain current limiting
T
j(TO)
Threshold junction temperature V
IS
= 5 V
100
130
160
C
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3 Not in an overload condition with drain current limiting.
April 1998
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK107-50GL
Logic level TOPFET
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-sp
Junction to solder point
-
12
18
K/W
R
th j-b
Junction to board
1
Mounted on any PCB
-
40
-
K/W
R
th j-a
Junction to ambient
Mounted on PCB of fig. 19
-
-
70
K/W
STATIC CHARACTERISTICS
T
b
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
50
55
-
V
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
DM
= 200 mA;
-
56
70
V
t
p
300
s;
0.01
I
DSS
Off-state drain current
V
DS
= 45 V; V
IS
= 0 V
-
0.5
2
A
I
DSS
Off-state drain current
V
DS
= 50 V; V
IS
= 0 V
-
1
20
A
I
DSS
Off-state drain current
V
DS
= 40 V; V
IS
= 0 V; T
j
= 100 C
-
10
100
A
R
DS(ON)
Drain-source on-state
V
IS
= 5 V; I
DM
= 100 mA;
-
150
200
m
resistance
t
p
300
s;
0.01
INPUT CHARACTERISTICS
T
b
= 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
Input threshold voltage
V
DS
= 5 V; I
D
= 1 mA
1.7
2.2
2.7
V
I
IS
Input supply current
normal operation;
V
IS
= 5 V
-
330
450
A
V
IS
= 4 V
-
170
270
A
I
ISL
Input supply current
protection latched;
V
IS
= 5 V
-
1.45
2
mA
V
IS
= 3.5 V
-
0.95
1.3
mA
V
ISR
Protection latch reset voltage
2
1
2.7
3.5
V
V
(CL)IS
Input clamping voltage
I
I
= 1.5 mA
6
7.5
-
V
R
IG
Input series resistance
to gate of power MOSFET
-
4.5
-
k
1 Temperature measured 1.3 mm from tab.
2 The input voltage below which the overload protection circuits will be reset.
April 1998
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK107-50GL
Logic level TOPFET
SWITCHING CHARACTERISTICS
T
amb
= 25 C; resistive load R
L
= 50
; adjust V
DD
to obtain I
D
= 250 mA; refer to test circuit and waveforms
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
IS
= 0 V to V
IS
= 5 V
-
0.9
-
s
t
r
Rise time
-
3.5
-
s
t
d off
Turn-off delay time
V
IS
= 5 V to V
IS
= 0 V
-
2.8
-
s
t
f
Fall time
-
9.0
-
s
T
amb
= 25 C; resistive load R
L
= 10 k
; V
DD
= 12.5 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
IS
= 0 V to V
IS
= 5 V
-
0.8
-
s
t
r
Rise time
-
2.3
-
s
t
d off
Turn-off delay time
V
IS
= 5 V to V
IS
= 0 V
-
7.5
-
s
t
f
Fall time
-
12.5
-
s
April 1998
4
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK107-50GL
Logic level TOPFET
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.3. Continuous drain current.
I
D
= f(T
amb
); condition: V
IS
= 5 V
Fig.4. Typical on-state characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
IS
; t
p
= 300
s
Fig.5. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 100 mA; V
IS
= 5 V
Fig.6. Typical on-state resistance, T
j
= 25 C.
R
DS(ON)
= f(V
IS
); conditions: I
D
= 100 mA, t
p
= 300
s
Fig.7. Typical transfer characteristics, T
j
= 25 C.
I
D
= f(V
IS
); conditions: V
DS
= 10 V, t
p
= 300
s
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
Tamb / C
ID / A
BUK107-50GL
2.0
1.5
1.0
0.5
0
WITHIN THE SHADED REGION
CURRENT LIMITING OCCURS
TYP.
0
2
4
6
8
10
VIS / V
RDS(ON) / mOhm
BUK107-50GL
240
200
160
120
80
40
0
TYP.
MAX.
0
4
8
12
16
20
24
28
32
VDS / V
ID / A
BUK107-50GL
1.5
1
0.5
0
VIS / V =
7
6
5
4
0
2
4
6
8
10
VIS / V
ID / A
BUK107-50GL
1.5
1
0.5
0
April 1998
5
Rev 1.200
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