Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
SYMBOL
PARAMETER
MIN.
UNIT
overload protected power switch
based on MOSFET technology in a
I
L
Nominal load current (ISO)
3.5
A
5 pin plastic envelope, configured
as a single high side switch.
SYMBOL
PARAMETER
MAX.
UNIT
APPLICATIONS
V
BG
Continuous off-state supply voltage
50
V
General controller for driving
I
L
Continuous load current
10
A
lamps, motors, solenoids, heaters.
T
j
Continuous junction temperature
150
C
R
ON
On-state resistance
100
m
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
with hysteresis
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection
Fig.1. Elements of the TOPFET HSS.
with external ground resistor
PINNING - SOT263
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Ground
2
Input
3
Battery (+ve supply)
4
Status
5
Load
Fig. 2.
Fig. 3.
tab
connected to pin 3
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
CONTROL &
PROTECTION
CIRCUITS
1 2 3 4 5
263-01
leadform
tab
B
G
L
I
S
HSS
TOPFET
April 1995
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Battery voltages
V
BG
Continuous off-state supply voltage
-
0
50
V
Reverse battery voltages
1
External resistors:
-V
BG
Repetitive peak supply voltage
R
G
150
; R
I
= R
S
4.7 k
,
-
32
V
0.1
-V
BG
Continuous reverse supply voltage
R
G
150
; R
I
= R
S
4.7 k
-
16
V
I
L
Continuous load current
T
mb
115 C
-
10
A
P
D
Total power dissipation
T
mb
25 C
-
62.5
W
T
stg
Storage temperature
-
-55
175
C
T
j
Continuous junction temperature
2
-
-
150
C
T
sold
Lead temperature
during soldering
-
250
C
Input and status
I
I
Continuous input current
-
-5
5
mA
I
S
Continuous status current
-
-5
5
mA
I
I
Repetitive peak input current
0.1
-20
20
mA
I
S
Repetitive peak status current
0.1
-20
20
mA
Inductive load clamping
E
BL
Non-repetitive clamping energy
T
mb
= 150 C prior to turn-off
-
1.2
J
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
3
R
th j-mb
Junction to mounting base
-
-
1.5
2
K/W
R
th j-a
Junction to ambient
in free air
-
60
75
K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.
April 1995
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G
= 1 mA
50
55
65
V
V
BL
Battery to load
I
L
= I
G
= 1 mA
50
55
65
V
-V
LG
Negative load to ground
I
L
= 1 mA
12
17
21
V
Supply voltage
battery to ground
V
BG
Operating range
1
-
5
-
40
V
Currents
V
BG
= 13 V
I
L
Nominal load current
2
V
BL
= 0.5 V; T
mb
= 85 C
3.5
-
-
A
I
B
Quiescent current
3
V
IG
= 0 V; V
LG
= 0 V
-
0.1
2
A
I
G
Operating current
4
V
IG
= 5 V; I
L
= 0 A
1.5
2.2
4
mA
I
L
Off-state load current
5
V
BL
= 13 V; V
IG
= 0 V
-
0.1
1
A
Resistances
R
ON
On-state resistance
6
V
BG
= 13 V; I
L
= 5 A; t
p
= 300
s
-
77
100
m
R
ON
On-state resistance
V
BG
= 5 V; I
L
= 1 A; t
p
= 300
s
-
116
150
m
INPUT CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
I
Input current
V
IG
= 5 V
35
60
100
A
V
IG
Input clamping voltage
I
I
= 200
A
6
7
8
V
V
IG(ON)
Input turn-on threshold voltage
-
2.1
2.4
V
V
IG(OFF)
Input turn-off threshold voltage
1.5
1.7
-
V
V
IG
Input turn-on hysteresis
-
0.4
-
V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
April 1995
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS
TRUTH TABLE
THRESHOLD
SYMBOL
CONDITION
INPUT
STATUS
OUTPUT
MIN.
TYP.
MAX.
UNIT
Normal on-state
1
1
1
Normal off-state
0
1
0
I
L(OC)
Open circuit load
1
1
0
1
50
200
350
mA
Open circuit load
0
1
0
T
j(TO)
Over temperature
2
1
0
0
150
175
-
C
Over temperature
3
0
0
0
V
BL(TO)
Short circuit load
4
1
0
0
8.5
10.3
12
V
Short circuit load
0
1
0
V
BG(TO)
Low supply voltage
5
X
1
0
3
4
5
V
V
BG(LP)
High supply voltage
6
X
1
0
40
45
50
V
For input `0' equals low, `1' equals high, `X' equals don't care.
For status `0' equals low, `1' equals open or high.
For output switch `0' equals off, `1' equals on.
STATUS CHARACTERISTICS
T
mb
= 25 C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SG
Status clamping voltage
I
S
= 100
A
6
7
8
V
V
SG
Status low voltage
I
S
= 50
A; V
BG
= 13 V
-
0.7
0.8
V
I
S
Status leakage current
V
SG
= 5 V
-
0.1
1
A
I
S
Status saturation current
7
V
SS
= 5 V; R
S
= 0
; V
BG
= 13 V
-
9
-
mA
Application information
R
S
External pull-up resistor
8
V
SS
= 5 V
-
100
-
k
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 80 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.5 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.1 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
April 1995
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
DYNAMIC CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Inductive load turn-off
-V
LG
Negative load voltage
1
V
IG
= 0 V; I
L
= 5 A; t
p
= 300
s
15
20
25
V
Short circuit load protection
2
V
IG
= 5 V; R
L
10 m
t
d sc
Response time
V
IG
= 5 V
-
90
-
s
I
L
Load current prior to turn-off
t < t
d sc
-
35
-
A
Overload protection
3
I
L(lim)
Load current limiting
V
BL
= 8.5 V; t
p
= 300
s
23
33
43
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C, V
BG
= 13 V, for resistive load R
L
= 13
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
During turn-on
to V
IG
= 5 V
t
d on
Delay time
to 10% V
L
-
16
-
s
dV/dt
on
Rate of rise of load voltage
-
1
2.5
V/
s
t
on
Total switching time
to 90% V
L
-
40
-
s
During turn-off
to V
IG
= 0 V
t
d off
Delay time
to 90% V
L
-
30
-
s
dV/dt
off
Rate of fall of load voltage
-
1.2
2.5
V/
s
t
off
Total switching time
to 10% V
L
-
50
-
s
CAPACITANCES
T
mb
= 25 C; f = 1 MHz; V
IG
= 0 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
ig
Input capacitance
V
BG
= 13 V
-
15
20
pF
C
bl
Output capacitance
V
BL
= V
BG
= 13 V
-
330
460
pF
C
sg
Status capacitance
V
SG
= 5 V
-
11
15
pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
April 1995
5
Rev 1.000
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