Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope.
BUK444
-200A
-200B
The device is intended for use in
V
DS
Drain-source voltage
200
200
V
Switched Mode Power Supplies
I
D
Drain current (DC)
5.3
4.7
A
(SMPS), motor control, welding,
P
tot
Total power dissipation
25
25
W
DC/DC and AC/DC converters, and
R
DS(ON)
Drain-source on-state
0.4
0.5
in general purpose switching
resistance
applications.
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
200
V
V
DGR
Drain-gate voltage
R
GS
= 20 k
-
200
V
V
GS
Gate-source voltage
-
-
30
V
-200A
-200B
I
D
Drain current (DC)
T
hs
= 25 C
-
5.3
4.7
A
I
D
Drain current (DC)
T
hs
= 100 C
-
3.3
3.0
A
I
DM
Drain current (pulse peak value)
T
hs
= 25 C
-
21
19
A
P
tot
Total power dissipation
T
hs
= 25 C
-
25
W
T
stg
Storage temperature
-
- 55
150
C
T
j
Junction Temperature
-
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5
K/W
heatsink
R
th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
1 2 3
case
d
g
s
April 1993
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA
200
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
2.1
3.0
4.0
V
I
DSS
Zero gate voltage drain current
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 C
-
1
10
A
I
DSS
Zero gate voltage drain current
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS
=
30 V; V
DS
= 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS
= 10 V;
BUK444-200A
-
0.35
0.4
resistance
I
D
= 3.5 A
BUK444-200B
-
0.4
0.5
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS
= 25 V; I
D
= 3.5 A
3.5
5.0
-
S
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
700
850
pF
C
oss
Output capacitance
-
100
160
pF
C
rss
Feedback capacitance
-
50
80
pF
t
d on
Turn-on delay time
V
DD
= 30 V; I
D
= 2.9 A;
-
12
20
ns
t
r
Turn-on rise time
V
GS
= 10 V; R
GS
= 50
;
-
45
70
ns
t
d off
Turn-off delay time
R
gen
= 50
-
80
120
ns
t
f
Turn-off fall time
-
40
60
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
12
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
5.3
A
current
I
DRM
Pulsed reverse drain current
-
-
-
21
A
V
SD
Diode forward voltage
I
F
= 5.3 A ; V
GS
= 0 V
-
1.1
1.3
V
t
rr
Reverse recovery time
I
F
= 5.3 A; -dI
F
/dt = 100 A/
s;
-
150
-
ns
Q
rr
Reverse recovery charge
V
GS
= 0 V; V
R
= 30 V
-
0.9
-
C
April 1993
2
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
AVALANCHE LIMITING VALUE
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D
= 9 A ; V
DD
100 V ;
-
-
50
mJ
unclamped inductive turn-off
V
GS
= 10 V ; R
GS
= 50
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
hs
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1
10
100
1000
10000
VDS / V
100
10
1
0.1
BUK444-200A,B
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
A
B
RDS(ON) = VDS/ID
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
BUKx44-lv
D =
t
p
t
p
T
T
P
t
D
April 1993
3
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
Fig.5. Typical output characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 3.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
12
14
16
18
20
BUK444-200A
VDS / V
20
15
10
5
0
4
5
6
7
8
10
20
ID / A
VGS / V =
0
2
4
6
8
10
12
14
16
18
20
BUK454-200A
ID / A
gfs / S
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
BUK454-200A
ID / A
1.5
1.0
0.5
0
4.5 5
5.5
6
6.5
7
7.5
8
10
20
RDS(ON) / Ohm
VGS / V =
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
2
4
6
8
10
BUK454-200A
VGS / V
20
15
10
5
0
ID / A
Tj / C =
25
150
-60
-40
-20
0
20
40
60
80
100
120
140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
April 1993
4
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 9 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 9 A
Fig.16. Avalanche energy test circuit.
0
1
2
3
4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
0
1
2
BUK454-200A
VSDS / V
IF / A
20
15
10
5
0
25
Tj / C = 150
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y4-200
20
40
60
80
100
120
140
Ths / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
4
8
12
16
20
24
28
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =40
160
BUK454-200
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS
=
0.5
LI
D
2
BV
DSS
/(
BV
DSS
-
V
DD
)
April 1993
5
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
April 1993
6
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1993
7
Rev 1.100
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