Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT186A
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- ISOLATION LIMITING VALUE & CHARACTERISTIC
- REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
- AVALANCHE LIMITING VALUE
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
Isolated version of BUK452-60A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope.
BUK472
-60A
-60B
The device is intended for use in
V
DS
Drain-source voltage
60
60
V
Switched Mode Power Supplies
I
D
Drain current (DC)
10
9.2
A
(SMPS), motor control, welding,
P
tot
Total power dissipation
22
22
W
DC/DC and AC/DC converters, and
T
j
Junction temperature
150
150
C
in automotive and general purpose
R
DS(ON)
Drain-source on-state
0.13
0.15
switching applications.
resistance
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
60
V
V
DGR
Drain-gate voltage
R
GS
= 20 k
-
60
V
V
GS
Gate-source voltage
-
-
30
V
-60A
-60B
I
D
Drain current (DC)
T
hs
= 25 C
-
10
9.2
A
I
D
Drain current (DC)
T
hs
= 100 C
-
6.3
5.8
A
I
DM
Drain current (pulse peak value)
T
hs
= 25 C
-
40
37
A
P
tot
Total power dissipation
T
hs
= 25 C
-
22
W
T
stg
Storage temperature
-
- 55
150
C
T
j
Junction temperature
-
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.68
K/W
heatsink
R
th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
1 2 3
case
d
g
s
November 1996
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA
60
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
2.1
3.0
4.0
V
I
DSS
Zero gate voltage drain current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 C
-
1
10
A
I
DSS
Zero gate voltage drain current
V
DS
= 60 V; V
GS
= 0 V; T
j
=125 C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS
=
30 V; V
DS
= 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS
= 10 V;
BUK472-60A
-
0.11
0.13
resistance
I
D
= 8.5 A
BUK472-60B
-
0.13
0.15
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS
= 25 V; I
D
= 8.5 A
3.5
4.7
-
S
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
400
500
pF
C
oss
Output capacitance
-
150
200
pF
C
rss
Feedback capacitance
-
70
100
pF
t
d on
Turn-on delay time
V
DD
= 30 V; I
D
= 3 A;
-
8
14
ns
t
r
Turn-on rise time
V
GS
= 10 V; R
GS
= 50
;
-
25
45
ns
t
d off
Turn-off delay time
R
gen
= 50
-
30
45
ns
t
f
Turn-off fall time
-
30
45
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
10
A
current
I
DRM
Pulsed reverse drain current
-
-
-
40
A
V
SD
Diode forward voltage
I
F
= 10 A ; V
GS
= 0 V
-
1.4
1.7
V
t
rr
Reverse recovery time
I
F
= 10 A; -dI
F
/dt = 100 A/
s;
-
60
-
ns
Q
rr
Reverse recovery charge
V
GS
= 0 V; V
R
= 30 V
-
0.15
-
C
November 1996
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
AVALANCHE LIMITING VALUE
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D
= 15 A ; V
DD
30 V ;
-
-
30
mJ
unclamped inductive turn-off
V
GS
= 10 V ; R
GS
= 50
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
hs
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1
100
VDS / V
ID / A
100
10
1
0.1
BUK442-60
10
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDS(ON) = VDS/ID
A
B
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth j-hs / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
t
D
ZTHX42
November 1996
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
Fig.5. Typical output characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 8.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
BUK452-50A
VDS / V
ID / A
30
20
10
0
4
5
6
7
8
10
15
20
VGS / V =
0
4
8
12
16
20
24
28
BUK452-50A
ID / A
gfs / S
5
4
3
2
1
0
0
4
8
12
16
20
24
28
BUK452-50A
ID / A
RDS(ON) / Ohm
0.5
0.4
0.3
0.2
0.1
0
5
6
7
8
10
20
VGS / V =
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
18
20
BUK452-50A
VGS / V
ID / A
30
20
10
0
Tj / C =
25
150
-60
-40
-20
0
20
40
60
80
100
120
140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
November 1996
4
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 15 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 15 A
Fig.16. Avalanche energy test circuit.
0
1
2
3
4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
0
1
2
BUK452-50A
VSDS / V
30
20
10
0
IF / A
25
150
Tj / C =
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y2-50
20
40
60
80
100
120
140
Ths / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
2
4
6
8
10
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =12
48
BUK452-60
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS
=
0.5
LI
D
2
BV
DSS
/(
BV
DSS
-
V
DD
)
November 1996
5
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
November 1996
6
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK472-60A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1996
7
Rev 1.200
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