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Электронный компонент: BUK475-60H

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60H
Isolated version of BUK455-60H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope. The device
V
DS
Drain-source voltage
60
V
is intended for use in Automotive
I
D
Drain current (DC)
22.5
A
applications, Switched Mode Power
P
tot
Total power dissipation
30
W
Supplies (SMPS), motor control,
T
j
Junction temperature
150
C
welding,
DC/DC
and
AC/DC
R
DS(ON)
Drain-source on-state
34
m
converters, and in general purpose
resistance
switching applications.
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
60
V
V
DGR
Drain-gate voltage
R
GS
= 20 k
-
60
V
V
GS
Gate-source voltage
-
-
30
V
I
D
Drain current (DC)
T
hs
= 25 C
-
22.5
A
I
D
Drain current (DC)
T
hs
= 100 C
-
14
A
I
DM
Drain current (pulse peak value)
T
hs
= 25 C
-
90
A
P
tot
Total power dissipation
T
hs
= 25 C
-
30
W
T
stg
Storage temperature
-
- 55
150
C
T
j
Junction temperature
-
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
4.17
K/W
heatsink
R
th j-a
Thermal resistance junction to
55
-
K/W
ambient
d
g
s
1 2 3
case
November 1996
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60H
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA
60
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
2.1
3.0
4.0
V
I
DSS
Zero gate voltage drain current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 C
-
1
10
A
I
DSS
Zero gate voltage drain current
V
DS
= 60 V; V
GS
= 0 V; T
j
=125 C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS
=
30 V; V
DS
= 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS
= 10 V; I
D
= 20 A
-
24
34
m
resistance
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS
= 25 V; I
D
= 20 A
8
13.5
-
S
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
1000
1600
pF
C
oss
Output capacitance
-
470
600
pF
C
rss
Feedback capacitance
-
180
275
pF
t
d on
Turn-on delay time
V
DD
= 30 V; I
D
= 3 A;
-
25
40
ns
t
r
Turn-on rise time
V
GS
= 10 V; R
GS
= 50
;
-
60
90
ns
t
d off
Turn-off delay time
R
gen
= 50
-
125
160
ns
t
f
Turn-off fall time
-
100
130
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
22.5
A
current
I
DRM
Pulsed reverse drain current
-
-
-
90
A
V
SD
Diode forward voltage
I
F
= 22.5 A ; V
GS
= 0 V
-
0.9
1.8
V
t
rr
Reverse recovery time
I
F
= 22.5 A; -dI
F
/dt = 100 A/
s;
-
60
-
ns
Q
rr
Reverse recovery charge
V
GS
= 0 V; V
R
= 30 V
-
0.25
-
C
November 1996
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60H
AVALANCHE LIMITING VALUE
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D
= 43 A ; V
DD
25 V ;
-
-
100
mJ
unclamped inductive turn-off
V
GS
= 10 V ; R
GS
= 50
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
hs
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.1
1
10
100
VDS / V
ID / A
1000
100
10
1
0.1
BUK445-60H
RDS(ON) = VDS/ID
10 us
100 us
1 ms
10 ms
100 ms
tp =
10 us
100 us
1 ms
10 ms
100 ms
tp =
DC
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx45-lv
D =
D =
t
p
t
p
T
T
P
t
D
November 1996
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60H
Fig.5. Typical output characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 10 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 20 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
0
20
40
60
80
100
4
5.5
6.5
9
10
BUK4Y5-60H
VDS / V
ID / A
VGS / V = 8
15
20
5
6
7
0
20
40
60
80
100
0
5
10
15
20
25
30
BUK4Y5-60H
ID / A
gfs / S
Tj / C =
-40
25
150
0
20
40
60
80
100
0
0.05
0.1
0.15
0.2
6.5
9
10
15
BUK4Y5-60H
ID / A
RDS(ON) / Ohm
VGS / V = 8
7
6
5
4.5
5.5
-60
-40
-20
0
20
40
60
80
100 120 140
Tj / C
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
6
8
10
12
0
20
40
60
80
100
BUK4Y5-60H
VGS / V
ID / A
Tj / C =
-40
25
150
-60
-40
-20
0
20
40
60
80
100
120
140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
November 1996
4
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60H
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 43 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 43 A
Fig.16. Avalanche energy test circuit.
0
1
2
3
4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
0
0.5
1
1.5
0
20
40
60
80
100
BUKXY5-60H
VSDS / V
Tj / C =
-40
25
150
IS / A
0.1
1
10
100
100
1000
10000
BUK4Y5-60H
VDS / V
C / pF
Ciss
Coss
Crss
20
40
60
80
100
120
140
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
10
20
30
40
50
60
0
5
10
15
20
BUK4Y5-60H
QG / nC
VGS / V
VDD / V = 12
48
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS
=
0.5
LI
D
2
BV
DSS
/(
BV
DSS
-
V
DD
)
November 1996
5
Rev 1.200