2004 Feb 17
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP1321-03
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Very low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 (SC-76) ultra small SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Top view
2
1
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
Marking code: V8.
The marking bar indicates the cathode.
sym006
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAP1321-03
-
plastic surface mounted package; 2 leads
SOD323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
60
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
s
90
C
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
2004 Feb 17
3
Philips Semiconductors
Product specification
Silicon PIN diode
BAP1321-03
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA
0.95
1.1
V
I
R
reverse leakage current
V
R
= 60 V
-
100
nA
C
d
diode capacitance
V
R
= 0; f = 1 MHz
0.4
-
pF
V
R
= 1 V; f = 1 MHz
0.35
0.45
pF
V
R
= 20 V; f = 1 MHz
0.25
0.32
pF
r
D
diode forward resistance
f = 100 MHz; note 1
I
F
= 0.5 mA
3.4
5.0
I
F
= 1 mA
2.4
3.6
I
F
= 10 mA
1.2
1.8
I
F
= 100 mA
0.85
1.3
|
s
21
|
2
isolation
V
R
= 0; f = 900 MHz
16.6
-
dB
V
R
= 0; f = 1800 MHz
11.6
-
dB
V
R
= 0; f = 2450 MHz
9.2
-
dB
|
s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
0.26
-
dB
I
F
= 0.5 mA; f = 1800 MHz
0.35
-
dB
I
F
= 0.5 mA; f = 2450 MHz
0.44
-
dB
|
s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
0.20
-
dB
I
F
= 1 mA; f = 1800 MHz
0.29
-
dB
I
F
= 1 mA; f = 2450 MHz
0.38
-
dB
|
s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
0.13
-
dB
I
F
= 10 mA; f = 1800 MHz
0.22
-
dB
I
F
= 10 mA; f = 2450 MHz
0.32
-
dB
|
s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
0.10
-
dB
I
F
= 100 mA; f = 1800 MHz
0.20
-
dB
I
F
= 100 mA; f = 2450 MHz
0.29
-
dB
L
charge carrier life time
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
; measured at I
R
= 3 mA
0.5
-
s
L
S
series inductance
I
F
= 100 mA; f = 100 MHz
1.5
-
nH
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-s)
thermal resistance from junction to soldering point
120
K/W
2004 Feb 17
4
Philips Semiconductors
Product specification
Silicon PIN diode
BAP1321-03
GRAPHICAL DATA
handbook, halfpage
10
1
10
-
1
MLD591
10
-
1
1
IF (mA)
rD
(
)
10
10
2
Fig.2
Forward resistance as a function of
forward current; typical values.
T
j
= 25
C; f = 100 MHz.
handbook, halfpage
0
20
500
0
100
200
300
400
4
Cd
(fF)
VR (V)
8
12
16
MLD592
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
T
j
= 25
C; = 1 MHz.
handbook, halfpage
0
1
f (GHz)
3
0
-
0.2
-
0.6
-
0.8
-
0.4
2
MLD593
s21
2
(
dB
)
(1)
(2)
(3)
(4)
Fig.4
Insertion loss (
|
s
21
|
2
) of the diode as a
function of frequency; typical values.
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
Diode inserted in series with a 50
stripline circuit
and biased via the analyzer Tee network.
T
amb
= 25
C.
handbook, halfpage
0
1
f (GHz)
3
0
-
10
-
30
-
40
-
20
2
MLD594
s21
2
(
dB
)
Fig.5
Isolation (
|
s
21
|
2
) of the diode as a function
of frequency; typical values.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
2004 Feb 17
5
Philips Semiconductors
Product specification
Silicon PIN diode
BAP1321-03
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOD323
SC-76
SOD323
99-09-13
03-12-17
Note
1. The marking bar indicates the cathode
UNIT
A
mm
0.05
1.1
0.8
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
A
1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface mounted package; 2 leads
0
1
(1)
2
1
2 mm
scale
b
p
c
D
E
H
D
Q
0.25
0.15
L
p
v
0.2
A
D
A
E
L
p
b
p
detail X
A
1
c
Q
H
D
v
A
M
X
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