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BUK7516-55A; BUK7616-55A
TrenchMOSTM standard level FET
Rev. 01 -- 18 January 2001
Product specification
c
c
1.
Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology, featuring very low on-state resistance.
Product availability:
BUK7516-55A in SOT78 (TO-220AB)
BUK7616-55A in SOT404
(D
2
-PAK).
2.
Features
s
TrenchMOSTM technology
s
Q101 compliant
s
175
C rated
s
Standard level compatible.
3.
Applications
s
Automotive and general purpose power switching:
x
12 V and 24 V loads
x
Motors, lamps and solenoids.
4.
Pinning information
Table 1:
Pinning - SOT78, SOT404, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
2
drain (d)
3
source (s)
mb
mounting base;
connected to drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOSTM standard level FET
Product specification
Rev. 01 -- 18 January 2001
2 of 15
9397 750 07682
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
-
55
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 10 V
-
65.7
A
P
tot
total power dissipation
T
mb
= 25
C
-
138
W
T
j
junction temperature
-
175
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
C
13
16
m
T
j
= 175
C
-
32
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
-
55
V
V
DGR
drain-gate voltage (DC)
R
GS
= 20 k
-
55
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 10 V;
Figure 2
and
3
-
65.7
A
T
mb
= 100
C; V
GS
= 10 V;
Figure 2
-
46.5
A
I
DM
peak drain current
T
mb
= 25
C; pulsed; t
p
10
s;
Figure 3
-
263
A
P
tot
total power dissipation
T
mb
= 25
C;
Figure 1
-
138
W
T
stg
storage temperature
-
55
+175
C
T
j
operating junction temperature
-
55
+175
C
Source-drain diode
I
DR
reverse drain current (DC)
T
mb
= 25
C
-
65.7
A
I
DRM
pulsed reverse drain current
T
mb
= 25
C; pulsed; t
p
10
s
-
263
A
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
unclamped inductive load; I
D
= 49 A;
V
DS
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
C
-
120
mJ
Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOSTM standard level FET
Product specification
Rev. 01 -- 18 January 2001
3 of 15
9397 750 07682
Philips Electronics N.V. 2001. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
C; I
DM
single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
P
der
(%)
Tmb (
o
C)
03aa24
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
I
der
(%)
T
mb
(
o
C)
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03nc01
1
10
102
103
1
10
102
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 us
100 us
tp
tp
T
P
t
T
=
Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOSTM standard level FET
Product specification
Rev. 01 -- 18 January 2001
4 of 15
9397 750 07682
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
K/W
mounted on printed circuit board;
minimum footprint; SOT404
package
50
K/W
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 4
1.1
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nc00
Single Shot
0.2
0.1
0.05
0.02
10-3
10-2
10-1
1
10
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
= 0.5
tp
tp
T
P
t
T
=
Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOSTM standard level FET
Product specification
Rev. 01 -- 18 January 2001
5 of 15
9397 750 07682
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
C
55
-
-
V
T
j
=
-
55
C
50
-
-
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
2
3
4
V
T
j
= 175
C
1
-
-
V
T
j
=
-
55
C
-
-
4.4
V
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
C
-
0.05
10
A
T
j
= 175
C
-
-
500
A
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0 V
-
2
100
nA
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
C
-
13
16
m
T
j
= 175
C
-
-
32
m
Dynamic characteristics
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
-
1580
2245
pF
C
oss
output capacitance
-
370
423
pF
C
rss
reverse transfer capacitance
-
220
312
pF
t
d(on)
turn-on delay time
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 10 V; R
G
= 10
;
-
16
-
ns
t
r
rise time
-
70
-
ns
t
d(off)
turn-off delay time
-
57
-
ns
t
f
fall time
-
41
-
ns
L
d
internal drain inductance
from drain lead 6mm from
package to centre of die
-
4.5
-
nH
from contact screw on
mounting base to centre of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to centre of
die SOT404
-
2.5
-
nH
L
s
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
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