DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
DISCRETE SEMICONDUCTORS
BF469; BF471
NPN high-voltage transistors
book, halfpage
M3D100
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF469; BF471
FEATURES
Low feedback capacitance.
APPLICATIONS
Intended for class-B video output stages in television
receivers and for high-voltage IF output stages.
DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package.
PNP complements: BF470 and BF472.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector, connected to mounting base
3
base
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF469
-
250
V
BF471
-
300
V
V
CEO
collector-emitter voltage
open base
BF469
-
250
V
BF471
-
300
V
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
mb
114
C
-
1.8
W
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 20 V
50
-
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
-
1.8
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF469; BF471
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead
minimum 10
10 mm.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BF469
-
250
V
BF471
-
300
V
V
CEO
collector-emitter voltage
open base
BF469
-
250
V
BF471
-
300
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
50
mA
I
CM
peak collector current
-
100
mA
I
BM
peak base current
-
50
mA
P
tot
total power dissipation
T
mb
114
C
-
1.8
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
100
K/W
R
th j-mb
thermal resistance from junction to mounting base
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 200 V
-
10
nA
I
E
= 0; V
CB
= 200 V; T
j
= 150
C
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
50
nA
h
FE
DC current gain
I
C
= 25 mA; V
CE
= 20 V
50
-
V
CEsat
collector-emitter saturation voltage
I
C
= 30 mA; I
B
= 5 mA
-
0.6
V
C
re
feedback capacitance
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
-
1.8
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1996 Dec 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF469; BF471
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.2 TO-126; SOT32.
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
handbook, full pagewidth
0.88
max
2.29
1
2
3
3.75
11.1
max
15.3
min
3.2
3.0
7.8 max
2.7
max
2.54
max
(1)
1.2
4.58
0.5
MBC076
90o
1996 Dec 09
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF469; BF471
NOTES
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