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Электронный компонент: BUK9240-100A

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DATA SHEET
Product specification
Supersedes data of 1999 Mar 26
1999 Sep 20
DISCRETE SEMICONDUCTORS
BAT160 series
Schottky barrier double diodes
halfpage
M3D087
1999 Sep 20
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
FEATURES
Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectification
Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package.
PINNING
PIN
BAT160
A
C
S
1
k
1
a
1
a
1
2
n.c.
n.c.
n.c.
3
k
2
a
2
k
2
4
a
1
, a
2
k
1
, k
2
k
1
, a
2
Fig.1
Simplified outline
(SOT223) and pin
configuration.
age
4
1
2
3
MSB002 - 1
Top view
Fig.2
BAT160A diode
configuration (symbol).
page
MGL171
1
3
2 n.c.
4
Fig.3
BAT160C diode
configuration (symbol).
page
MGL172
1
3
2 n.c.
4
Fig.4
BAT160S diode
configuration (symbol).
page
MGL173
1
3
4
2 n.c.
MARKING
TYPE NUMBER
MARKING
CODE
BAT160A
AT160A
BAT160C
AT160C
BAT160S
AT160S
1999 Sep 20
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
60
V
I
F
continuous forward current
-
1
A
I
FSM
non-repetitive peak forward current
t
p
= 8.3 ms; half sinewave;
JEDEC method
-
10
A
I
RSM
non-repetitive peak reverse current
t
p
= 100
s
-
0.5
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.5
I
F
= 100 mA
400
mV
I
F
= 1 A
650
mV
I
F
= 2 A
850
mV
I
R
reverse current
V
R
= 60 V; note 1; see Fig.6
350
A
V
R
= 60 V; T
j
= 100
C; note 1;
see Fig.6
8
mA
C
d
diode capacitance
f = 1 MHz; V
R
= 4 V; see Fig 7
60
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
1999 Sep 20
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
GRAPHICAL DATA
handbook, halfpage
0.8
0.4
0.2
0
VF (V)
IF
(mA)
0.6
10
4
10
3
10
2
10
1
MCD784
(1)
(3)
(2)
(4)
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
Fig.5
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
60
40
20
0
(3)
VR (V)
MCD768
10
4
10
5
10
3
10
2
10
IR
(
A)
1
10
-
1
(1)
(2)
(4)
(1) T
amb
= 125
C.
(2) T
amb
= 100
C.
(3) T
amb
= 75
C.
(4) T
amb
= 25
C.
Fig.6
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
0
VR (V)
20
40
60
10
3
10
2
10
Cd
(pF)
MCD766
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
1999 Sep 20
5
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
SC-73
97-02-28
99-09-13
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
1999 Sep 20
6
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Sep 20
7
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT160 series
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
Philips Semiconductors a worldwide company
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Printed in The Netherlands
115002/03/pp
8
Date of release:
1999 Sep 20
Document order number:
9397 750 06097