Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
File under Discrete Semiconductors, SC04
1997 Mar 07
DISCRETE SEMICONDUCTORS
BC307; BC307B
PNP general purpose transistors
andbook, halfpage
M3D186
1997 Mar 07
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC307; BC307B
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC237 and BC237B.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector
Fig.1
Simplified outline (TO-92; SOT54) and
symbol.
handbook, halfpage
1
3
2
MAM281
3
2
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
I
CM
peak collector current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
500
mW
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V
BC307
125
455
BC307B
222
455
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz
100
-
MHz
1997 Mar 07
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC307; BC307B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
50
V
V
CEO
collector-emitter voltage
open base
-
-
45
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
100
mA
I
CM
peak collector current
-
-
200
mA
I
BM
peak base current
-
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
1997 Mar 07
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC307; BC307B
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
-
30 V;
-
-
15
nA
I
E
= 0; V
CB
=
-
30 V; T
j
= 150
C
-
-
4
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4 V
-
-
15
nA
h
FE
DC current gain
I
C
=
-
2 mA; V
CE
=
-
5 V; see Fig.2
BC307
125
455
BC307B
222
455
V
CEsat
collector-emitter saturation voltage I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
600
mV
V
BEsat
base-emitter saturation voltage
I
C
=
-
100 mA; I
B
=
-
5 mA; note 1
-
-
1.1
V
V
BE
base-emitter voltage
I
C
=
-
2 mA; V
CE
=
-
5 V; note 1
600
720
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
=
-
10 V; f = 1 MHz
-
3
pF
f
T
transition frequency
I
C
=
-
10 mA; V
CE
=
-
5 V; f = 100 MHz;
note 1
100
-
MHz
F
noise figure
I
C
=
-
200
A; V
CE
=
-
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
10
dB
Fig.2 DC current gain; typical values.
BC307B.
handbook, full pagewidth
0
300
200
100
400
MBH727
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
1997 Mar 07
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC307; BC307B
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
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