DATA SHEET
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
DISCRETE SEMICONDUCTORS
BUT12; BUT12A
Silicon diffused power transistors
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12; BUT12A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
andbook, halfpage
MBK106
1 2 3
Fig.1 Simplified outline (TO-220AB) and symbol.
handbook, halfpage
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUT12
850
V
BUT12A
1000
V
V
CEO
collector-emitter voltage
open base
BUT12
400
V
BUT12A
450
V
V
CEsat
collector-emitter saturation voltage
see Fig.8
1.5
V
I
Csat
collector saturation current
BUT12
6
A
BUT12A
5
A
I
C
collector current (DC)
see Figs 3 and 4
8
A
I
CM
collector current (peak value)
see Fig. 4
20
A
P
tot
total power dissipation
T
mb
25
C; see Fig.2
125
W
t
f
fall time
resistive load;
see Figs 12 and 13
0.8
s
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
1
K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12; BUT12A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUT12
-
850
V
BUT12A
-
1000
V
V
CEO
collector-emitter voltage
open base
BUT12
-
400
V
BUT12A
-
450
V
I
Csat
collector saturation current
BUT12
-
6
A
BUT12A
-
5
A
I
C
collector current (DC)
see Figs 3 and 4
-
8
A
I
CM
collector current (peak value)
see Fig. 4
-
20
A
I
B
base current (DC)
-
4
A
I
BM
base current (peak value)
-
6
A
P
tot
total power dissipation
T
mb
25
C; see Fig.2
-
125
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
Fig.2 Power derating curve.
handbook, halfpage
0
50
Tmb (
o
C)
100
150
120
0
40
80
MGD283
Ptot max
(%)
Fig.3 Reverse bias SOAR.
V
BE
=
-
1 to
-
5 V; T
c
= 100
C.
handbook, halfpage
10
0
400
IC
(A)
1200
VCE (V)
0
MGB892
800
5
BUT12F
BUT12AF
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12; BUT12A
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH; see
Figs 6 and 7
BUT12
400
-
-
V
BUT12A
450
-
-
V
V
CEsat
collector-emitter saturation voltage
BUT12
I
C
= 6 A; I
B
= 1.2 A; see Figs 8 and 10
-
-
1.5
V
BUT12A
I
C
= 5 A; I
B
= 1 A; see Figs 8 and 10
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
BUT12
I
C
= 6 A; I
B
= 1.2 A; see Fig.8
-
-
1.5
V
BUT12A
I
C
= 5 A; I
B
= 1 A; see Fig.8
-
-
1.5
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESmax
; V
BE
= 0; note 1
-
-
1
mA
V
CE
= V
CESmax
; V
BE
= 0; T
j
= 125
C;
note 1
-
-
3
mA
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 10 mA; see Fig.11
10
18
35
V
CE
= 5 V; I
C
= 1 A; see Fig.11
10
20
35
Switching times resistive load (see Figs 12 and 13)
t
on
turn-on time
BUT12
I
Con
= 6 A; I
Bon
=
-
I
Boff
= 1.2 A
-
-
1
s
BUT12A
I
Con
= 5 A; I
Bon
=
-
I
Boff
= 1 A
-
-
1
s
t
s
storage time
BUT12
I
Con
= 6 A; I
Bon
=
-
I
Boff
= 1.2 A
-
-
4
s
BUT12A
I
Con
= 5 A; I
Bon
=
-
I
Boff
= 1 A
-
-
4
s
t
f
fall time
BUT12
I
Con
= 6 A; I
Bon
=
-
I
Boff
= 1.2 A
-
-
0.8
s
BUT12A
I
Con
= 5 A; I
Bon
=
-
I
Boff
= 1 A
-
-
0.8
s
Switching times inductive load (see Figs 14 and 15)
t
s
storage time
BUT12
I
Con
= 6 A; I
Bon
= 1.2 A; V
CL
= 250 V;
T
c
= 100
C
-
1.9
2.5
s
BUT12A
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
c
= 100
C
-
1.9
2.5
s
t
f
fall time
BUT12
I
Con
= 6 A; I
Bon
= 1.2 A; V
CL
= 250 V;
T
c
= 100
C
-
200
300
ns
BUT12A
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
c
= 100
C
-
200
300
ns
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12; BUT12A
Fig.4 Forward bias SOAR.
T
mb
< 25
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) P
tot max
and P
tot peak max
lines.
(2) Second breakdown limits.
andbook, full pagewidth
MGB945
10
1
10
2
10
3
1000
400
10
4
VCE (V)
VCE (V)
10
10
-
1
10
2
10
-
2
10
-
2
10
-
3
IC
(A)
IC
(A)
= 0.01
1 ms
2 ms
5 ms
10 ms
20 ms
DC
100
s
200
s
500
s
tp =
20
s
50
s
III
III
IV
I
II
(2)
(1)
IC max
ICM max
BUT12
BUT12A
BUT12
BUT12A
PDF 
ZIP