DATA SHEET
Product specification
Supersedes data of 1997 Aug 13
1999 Jun 11
DISCRETE SEMICONDUCTORS
BUT18; BUT18A
Silicon diffused power transistors
1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
dbook, halfpage
MBK106
1 2 3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUT18
850
V
BUT18A
1000
V
V
CEO
collector-emitter voltage
open base
BUT18
400
V
BUT18A
450
V
V
CEsat
collector-emitter saturation voltage
see Fig.7
1.5
V
I
Csat
collector saturation current
4
A
I
C
collector current (DC)
see Fig.2
6
A
I
CM
collector current (peak value)
see Fig.2
12
A
P
tot
total power dissipation
T
mb
25
C; see Fig.4
110
W
t
f
fall time
resistive load; see Figs 10 and 11
0.8
s
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
1.15
K/W
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUT18
-
850
V
BUT18A
-
1000
V
V
CEO
collector-emitter voltage
open base
BUT18
-
400
V
BUT18A
-
450
V
I
Csat
collector saturation current
-
4
A
I
C
collector current (DC)
see Fig.2
-
6
A
I
CM
collector current (peak value)
see Fig.2
-
12
A
I
B
base current (DC)
-
3
A
I
BM
base current (peak value)
-
6
A
P
tot
total power dissipation
T
mb
25
C; see Fig.4
-
110
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining
voltage
I
C
= 0.1 A; I
Boff
= 0; L = 25 mH; see
Figs 5 and 6
BUT18
400
-
-
V
BUT18A
450
-
-
V
V
CEsat
collector-emitter saturation voltage I
C
= 4 A; I
B
= 0.8 A; see Fig.7
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A; see Fig.8
-
-
1.3
V
I
CES
collector-emitter cut-off current
V
CE
= V
CESMmax
; V
BE
= 0; note 1
-
-
1
mA
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
2
mA
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 10 mA; see Fig.9
10
18
35
V
CE
= 5 V; I
C
= 1 A; see Fig.9
10
20
35
Switching times resistive load (see Figs 10 and 11)
t
on
turn-on time
I
Con
= 4 A; I
Bon
=
-
I
Boff
= 800 mA
-
-
1
s
t
s
storage time
I
Con
= 4 A; I
Bon
=
-
I
Boff
= 800 mA
-
-
4
s
t
f
fall time
I
Con
= 4 A; I
Bon
=
-
I
Boff
= 800 mA
-
-
0.8
s
Switching times inductive load (see Figs 10 and 13)
t
s
storage time
I
Con
= 4 A; I
Bon
= 800 mA; V
CL
= 250 V
-
1.6
2.5
s
t
f
fall time
I
Con
= 4 A; I
Bon
= 800 mA; V
CL
= 250 V
-
150
400
ns
1999 Jun 11
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
Fig.2 Forward bias SOAR.
T
mb
= 25
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB921
1
10
1
10
2
10
3
10
4
II
I
VCE (V)
10
10
-
1
10
2
10
-
2
10
-
4
10
-
3
IC
(A)
DC
ICM max
IC max
BUT18
BUT18A
1999 Jun 11
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
Fig.3 Transient thermal impedance.
handbook, full pagewidth
MGB862
10
10
-
1
10
-
2
tp (ms)
10
-
1
10
-
2
10
-
3
10
1
10
3
10
2
1
Zth j
-
mb
(K/W)
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
= 1
Fig.4 Power derating curve.
handbook, halfpage
0
50
Tmb (
o
C)
100
150
120
0
40
80
MGD283
Ptot max
(%)
Fig.5
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
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