DATA SHEET
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
DISCRETE SEMICONDUCTORS
BUW13F; BUW13AF
Silicon diffused power transistors
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
mounting base;
electrically isolated
ook, halfpage
1
2
3
MSB012
Front view
Fig.1 Simplified outline (SOT199) and symbol.
handbook, halfpage
3
2
1
MBB008
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW13F
850
V
BUW13AF
1000
V
V
CEO
collector-emitter voltage
open base
BUW13F
400
V
BUW13AF
450
V
V
CEsat
collector-emitter saturation voltage
see Figs 8 and 10
1.5
V
I
Csat
collector saturation current
BUW13F
10
A
BUW13AF
8
A
I
C
collector current (DC)
see Figs 3 and 4
15
A
I
CM
collector current (peak value)
t
p
< 20 ms; see Fig 4
30
A
P
tot
total power dissipation
T
h
25
C; see Fig.2
37
W
t
f
fall time
resistive load; see Fig.13
0.8
s
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30
5 N force on centre of package.
2. Mounted with heatsink compound and 30
5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Mounted without heatsink compound and 30
5 N force on centre of package.
2. Mounted with heatsink compound and 30
5 N force on centre of package.
ISOLATION CHARACTERISTICS
Note
1. Repetitive peak operation with RH
65% under clean and dust-free conditions.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
3.4
K/W
note 2
2.5
K/W
R
th j-a
thermal resistance from junction to ambient
35
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW13F
-
850
V
BUW13AF
-
1000
V
V
CEO
collector-emitter voltage
open base
BUW13F
-
400
V
BUW13AF
-
450
V
I
Csat
collector saturation current
BUW13F
-
10
A
BUW13AF
-
8
A
I
C
collector current (DC)
see Figs 3 and 4
-
15
A
I
CM
collector current (peak value)
t
p
< 20 ms; see Fig 4
-
30
A
I
B
base current (DC)
-
6
A
I
BM
base current (peak value)
t
p
=
-
20 ms
-
9
A
P
tot
total power dissipation
T
h
25
C; see Fig.2; note 1
-
37
W
T
h
25
C; see Fig.2; note 2
-
50
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
MAX.
UNIT
V
isolM
isolation voltage from all terminals to external heatsink (peak value); note 1 2000
V
C
isol
isolation capacitance from collector to external heatsink
21
pF
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 6 and 7
BUW13F
400
-
-
V
BUW13AF
450
-
-
V
V
CEsat
collector-emitter saturation voltage
BUW13F
I
C
= 10 A; I
B
= 2 A; see
Figs 8 and 10
-
-
1.5
V
BUW13AF
I
C
= 8 A; I
B
= 1.6 A; see
Figs 8 and 10
-
-
1.5
V
V
BEsat
base-emitter saturation voltage
BUW13F
I
C
= 10 A; I
B
= 2 A; see Fig.8
-
-
1.6
V
BUW13AF
I
C
= 8 A; I
B
= 1.6 A;
see Fig.8
-
-
1.6
V
I
Csat
collector saturation current
V
CE
= 1.5 V
BUW13F
-
-
10
A
BUW13AF
-
-
8
A
I
CES
collector-emitter cut-off current
V
CE
= V
CESMmax
; V
BE
= 0;
note 1
-
-
1
mA
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
4
mA
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
-
-
10
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 20 mA;
see Fig.11
10
18
35
V
CE
= 5 V; I
C
= 1.5 A;
see Fig.11
10
20
35
Switching times resistive load (see Figs 12 and 13)
t
on
turn-on time
BUW13F
I
Con
= 10 A; I
Bon
= I
Boff
= 2 A
-
-
1
s
BUW13AF
I
Con
= 8 A; I
Bon
= I
Boff
= 1.6 A
-
-
1
s
t
s
storage time
BUW13F
I
Con
= 10 A; I
Bon
= I
Boff
= 2 A
-
-
4
s
BUW13AF
I
Con
= 8 A; I
Bon
= I
Boff
= 1.6 A
-
-
4
s
t
f
fall time
BUW13F
I
Con
= 10 A; I
Bon
= I
Boff
= 2 A
-
-
0.8
s
BUW13AF
I
Con
= 8 A; I
Bon
= I
Boff
= 1.6 A
-
-
0.8
s
Switching times inductive load (see Figs 14 and 15)
t
s
storage time
BUW13F
I
Con
= 10 A; I
B
= 2 A;
V
CL
= 250 V; T
c
= 100
C
-
2.8
3.5
s
BUW13AF
I
Con
= 8 A; I
B
= 1.6 A;
V
CL
= 300 V; T
c
= 100
C
-
2.8
3.5
s
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
Note
1. Measured with a half-sinewave voltage (curve tracer).
t
f
fall time
BUW13F
I
Con
= 10 A; I
B
= 2 A;
V
CL
= 250 V; T
c
= 100
C
-
200
300
ns
BUW13AF
I
Con
= 8 A; I
B
= 1.6 A;
V
CL
= 300 V; T
c
= 100
C
-
200
300
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.2 Power derating curve.
handbook, halfpage
0
50
Th (
o
C)
100
150
120
0
40
80
MGK674
Ptot max
(%)
Fig.3 Reverse bias SOAR.
T
c
100
C; V
BE
=
-
1 to
-
5 V.
handbook, halfpage
20
0
400
IC
(A)
1200
VCE (V)
0
MGB896
800
10
BUW13F
BUW13AF
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