DATA SHEET
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
DISCRETE SEMICONDUCTORS
BUW84; BUW85
Silicon diffused power transistors
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT82 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems
Switching applications.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to mounting base
3
emitter
ok, halfpage
3
2
1
MBK107
Fig.1 Simplified outline (SOT82) and symbol.
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW84
-
800
V
BUW85
-
1000
V
V
CEO
collector-emitter voltage
open base
BUW84
-
400
V
BUW85
-
450
V
V
CEsat
collector-emitter saturation voltage
I
C
= 1 A; I
B
= 200 mA; see Fig.7
-
1
V
I
C
collector current (DC)
see Figs 4 and 5
-
2
A
I
CM
collector current (peak value)
see Figs 4 and 5
-
3
A
P
tot
total power dissipation
T
mb
25
C; see Fig.8
-
50
W
t
f
fall time
resistive load; see Fig.11
0.4
-
s
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
2.1
K/W
R
th j-a
thermal resistance from junction to ambient in free air
100
K/W
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
V
BE
= 0
BUW84
-
800
V
BUW85
-
1000
V
V
CEO
collector-emitter voltage
open base
BUW84
-
400
V
BUW85
-
450
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
see Figs 4 and 5
-
2
A
I
CM
collector current (peak value)
t
p
= 2 ms; see Figs 4 and 5
-
3
A
I
B
base current (DC)
-
0.75
A
I
BM
base current (peak value)
-
1
A
I
BM
base current (reversed; peak value) turn-off current
-
-
1
A
P
tot
total power dissipation
T
mb
25
C; see Fig.8
-
50
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 2 and 3
BUW84
400
-
-
V
BUW85
450
-
-
V
V
CEsat
collector-emitter saturation voltage
I
C
= 0.3 A; I
B
= 30 mA;
see Fig.7
-
-
0.8
V
I
C
= 1 A; I
B
= 200 mA;
see Fig.7
-
-
1
V
V
BEsat
base-emitter saturation voltage
I
C
= 1 A; I
B
= 200 mA
-
-
1.1
V
I
CES
collector-emitter cut-off current
V
CEM
= V
CEMSmax
; V
BE
= 0;
note 1
-
-
200
A
V
CEM
= V
CEMSmax
; V
BE
= 0;
T
j
= 125
C; note 1
-
-
1.5
mA
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
1
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 5 A; see Fig.10 15
-
-
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
20
50
100
f
T
transition frequency
V
CE
= 10 V; I
C
= 200 mA;
f = 1 MHz
-
20
-
MHz
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
Note
1. Measured with a half-sinewave voltage (curve tracer).
Switching times in horizontal deflection circuit (see Fig.11)
t
on
turn-on time
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
-
400 mA; V
CC
= 250 V
-
0.2
0.5
s
t
s
storage time
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
-
400 mA; V
CC
= 250 V
-
2
3.5
s
t
f
fall time
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
-
400 mA; V
CC
= 250 V
-
0.4
-
s
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
-
400 mA; V
CC
= 250 V;
T
mb
= 95
C
-
-
1.4
s
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.2
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
Fig.3
Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
MGE239
IC
(mA)
250
200
100
0
min
VCEOsust
VCE (V)
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
Fig.4 Forward bias SOAR.
BUW84.
T
mb
25
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
100
and t
p
0.6
s.
IV - Repetitive pulse operation in this region is permissible provided V
BE
0 and t
p
2 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
handbook, full pagewidth
MGB938
10
1
10
2
10
3
10
4
VCE (V)
10
10
-
1
10
-
3
10
-
2
IC
(A)
= 0.01
1 ms
2 ms
5 ms
10 ms
DC
100
s
200
s
500
s
tp =
20
s
50
s
III
I
II
IV
(2)
(1)
IC max
ICM max
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