1996 Sep 26
2
Philips Semiconductors
Product specification
Damper diode
BY228
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
APPLICATIONS
Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
k
a
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
non-repetitive peak reverse voltage
-
1650
V
V
RRM
repetitive peak reverse voltage
-
1650
V
V
R
continuous reverse voltage
-
1500
V
I
FWM
working peak forward current
T
amb
= 75
C; PCB mounting (see
Fig.4); see Fig.2
-
5
A
I
FRM
repetitive peak forward current
-
10
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
50
A
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 5 A; T
j
= T
j max
; see Fig.3
1.4
V
I
F
= 5 A; see Fig.3
1.5
V
I
R
reverse current
V
R
= V
Rmax
; T
j
= 150
C
150
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.6
1
s
t
fr
forward recovery time
when switched to I
F
= 5 A in 50 ns;
T
j
= T
j max
; Fig.7
1
s
1996 Sep 26
3
Philips Semiconductors
Product specification
Damper diode
BY228
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.4.
For more information please refer to the
"General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
75
K/W
mounted as shown in Fig.5
40
K/W
1996 Sep 26
4
Philips Semiconductors
Product specification
Damper diode
BY228
GRAPHICAL DATA
Fig.2
Maximum total power dissipation as a
function of working peak forward current.
Solid line: basic high-voltage E/W modulator circuit; see Fig.8.
Dotted line: basic conventional horizontal deflection circuit; see Fig.9.
Curves include power dissipation due to switching losses.
handbook, halfpage
0
5
4
3
2
1
0
MBH407
0.75
0.25
0.50
1.25
1.00
IFWM (A)
Ptot
(W)
Fig.3
Forward current as a function of forward
voltage; maximum values.
Dotted line: T
j
= 150
C.
Solid line: T
j
= 25
C.
handbook, halfpage
0
2
1
0
MBH408
3
1
2
5
4
VF (V)
IF
(A)
Fig.4 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.5
Mounting with additional printed circuit
board for heat sink purposes.
Dimensions in mm.
handbook, halfpage
35
30
10
MGA204
25.4
10
3 cm
2
copper
3 cm
2
copper
1996 Sep 26
5
Philips Semiconductors
Product specification
Damper diode
BY228
Fig.6 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.7 Forward recovery time definition.
handbook, halfpage
t
t fr
10%
IF
t
90%
100%
VF
MGD600
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