Philips Semiconductors
Product specification
Rectifier diodes
BY329F, BY329X series
fast, soft-recovery
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 800 V/ 1000 V/ 1200 V
Fast switching
Soft recovery characteristic
I
F(AV)
= 8 A
High thermal cycling performance
Isolated mounting tab
I
FSM
65 A
t
rr
145 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
The BY329F series is supplied in the conventional leaded SOD100 package.
The BY329X series is supplied in the conventional leaded SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BY329F / BY329X
-800
-1000
-1200
V
RSM
Peak non-repetitive reverse
-
800
1000
1200
V
voltage
V
RRM
Peak repetitive reverse voltage
-
800
1000
1200
V
V
RWM
Crest working reverse voltage
-
600
800
1000
V
I
F(AV)
Average forward current
1
square wave;
= 0.5;
-
8
A
T
hs
83 C
sinusoidal; a = 1.57;
-
7
A
T
hs
90 C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Peak repetitive forward current
t = 25
s;
= 0.5;
-
16
A
T
hs
83 C
I
FSM
Peak non-repetitive forward
t = 10 ms
-
65
A
current.
t = 8.3 ms
-
71
A
sinusoidal; T
j
= 150 C prior
to surge; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
28
A
2
s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1. Neglecting switching and reverse current losses.
k
a
1
2
1
2
case
1
2
case
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BY329F, BY329X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOD100 package; R.H.
65%; clean and
-
-
1500
V
both terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
-
-
2500
V
both terminals to external
sinusoidal waveform; R.H.
65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 1 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 20 A
-
1.5
1.85
V
I
R
Reverse current
V
R
= V
RWM
; T
j
= 125 C
-
0.1
1.0
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
rr
Reverse recovery time
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/
s
-
125
145
ns
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/
s
-
0.5
0.7
C
dI
R
/dt
Maximum slope of the reverse
I
F
= 2 A; -dI
F
/dt = 20 A/
s
-
50
60
A/
s
recovery current
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BY329F, BY329X series
fast, soft-recovery
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Maximum forward dissipation, P
F
= f(I
F(AV)
);
square wave current waveform; parameter D = duty
cycle = t
p
/T.
Fig.3. Maximum forward dissipation, P
F
= f(I
F(AV)
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150C prior
to surge with reapplied V
RWM
.
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
Fig.6. Maximum Q
s
at T
j
= 25C and 150C
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
1ms
10ms
0.1s
1s
10s
tp / s
IFS (RMS) / A
BY329
100
90
80
70
60
50
40
30
20
10
0
IFSM
0
1
BY229F
VF / V
IF / A
30
20
10
0
2
0.5
1.5
max
typ
Tj = 150 C
Tj = 25 C
0
2
4
6
8
10
12
BY329
IF(AV) / A
PF / W
20
15
10
5
0
Ths(max) / C
150
54
78
102
126
0.5
0.2
0.1
D = 1.0
D =
t
p
t
p
T
T
I
t
Vo = 1.25 V
Rs = 0.03 Ohms
1
100
BY329
-dIF/dt (A/us)
Qs / uC
10
1
0.1
10
2 A
IF = 10 A
10 A
1 A
1 A
2 A
Tj = 150 C
Tj = 25 C
0
2
4
6
8
BY329
IF(AV) / A
PF / W
15
10
5
0
4
2.8
2.2
1.9
a = 1.57
Ths(max) / C
150
78
102
126
Vo = 1.25 V
Rs = 0.03 Ohms
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BY329F, BY329X series
fast, soft-recovery
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25C
and 150C
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
1
10
100
BY329
-dIF/dt (A/us)
trr / ns
1000
100
10
1 A
IF = 10 A
Tj = 150 C
Tj = 25 C
10A
1A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BY229F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
1
100
100
10
1
10
1000
BY329
Cd / pF
VR / V
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BY329F, BY329X series
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M
0.4
top view
3.5 max
not tinned
4.4
k
a
September 1998
5
Rev 1.100
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