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Электронный компонент: BY329X-1500

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Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 1500 V
Fast switching
Soft recovery characteristic
V
F
1.35 V / 1.5 V
High thermal cycling performance
Isolated mounting tab
I
F(peak)
= 6 A (f = 16 kHz)
I
F(peak)
= 6 A (f = 70 kHz)
I
FSM
75 A
t
rr
230 ns / 160 ns
GENERAL DESCRIPTION
PINNING
SOD113
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
anode
and soft recovery characteristic.
The device is intended for use in TV
2
cathode
receivers and PC monitors.
tab
isolated
The BY329X series is supplied in
the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive reverse
-
1500
V
voltage
V
RRM
Peak repetitive reverse
-
1500
V
voltage
V
RWM
Crest working reverse voltage
-
1300
V
BY329X
-1500
-1500S
I
F(peak)
Peak working forward current
f = 16 kHz
-
6
-
A
f = 70 kHz
-
-
6
A
I
FRM
Peak repetitive forward
t = 25
s;
= 0.5; T
hs
86 C
-
14
A
current
I
F(RMS)
RMS forward current
-
11
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
75
A
current
sinusoidal; T
j
= 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
150
C
temperature
k
a
1
2
1
2
case
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329X- 1500
1500S 1500 1500S
V
F
Forward voltage
I
F
= 6.5 A
1.1
1.3
1.45
1.6
V
I
F
= 6.5 A; T
j
= 125 C
1.05
1.2
1.35
1.5
V
I
R
Reverse current
V
R
= 1300 V
-
250
-
250
A
V
R
= 1300 V; T
j
= 125 C
-
1
-
1
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329X 1500 1500S
1500
1500S
t
rr
Reverse recovery time
I
F
= 1 A; V
R
30 V;
0.18
0.13
0.23
0.16
s
dI
F
/dt = 50A/
s
Q
s
Reverse recovery charge
I
F
= 2 A; -dI
F
/dt = 20 A/
s
1.6
0.7
2.0
0.95
C
V
fr
Peak forward recovery voltage
I
F
= 6.5A; dI
F
/dt = 50A/
s
17
23
30
40
V
t
fr
Forward recovery time
I
F
= 6.5A; dI
F
/dt = 50A/
s
210
220
300
320
ns
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t
rr
and Q
s
Fig.3. Basic horizontal deflection circuit.
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.5. BY329-1500 Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Fig.6. BY329-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
time
time
V F
V
fr
V F
I
F
10%
5V
tfr
10
100
1
10
100
BY459X-1500
line frequency / kHz
Maximum pulse width / us
V
time
VRRM
width tp
period T
pulse
100%
time
dI
dt
F
I
R
I
F
trr
25%
Qs
0
0.5
1
1.5
2
0
10
20
30
VF / V
IF / A
Tj = 125 C
Tj = 25 C
BY32915
typ
max
Line output transformer
VCC
D1
LY
Cs
Cf
deflection transistor
0
0.5
1
1.5
2
0
10
20
30
VF / V
IF / A
Tj = 125 C
Tj = 25 C
typ
max
BY32915S
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
Fig.7. Transient thermal impedance Z
th
= f(t
p
)
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BY229F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
September 1998
5
Rev 1.100