www.docs.chipfind.ru
DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 26
DISCRETE SEMICONDUCTORS
BYD11 series
Controlled avalanche rectifiers
M3D122
book, halfpage
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
TM
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD11D
11D
BYD11G
11G
BYD11J
11J
BYD11K
11K
BYD11M
11M
MAM196
k
a
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD11D
-
200
V
BYD11G
-
400
V
BYD11J
-
600
V
BYD11K
-
800
V
BYD11M
-
1000
V
V
RWM
crest working reverse voltage
BYD11D
-
200
V
BYD11G
-
400
V
BYD11J
-
600
V
BYD11K
-
800
V
BYD11M
-
1000
V
V
R
continuous reverse voltage
BYD11D
-
200
V
BYD11G
-
400
V
BYD11J
-
600
V
BYD11K
-
800
V
BYD11M
-
1000
V
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.9.
For more information please refer to the
"General Part of associated Handbook".
I
F(AV)
average forward current
T
tp
= 55
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
-
0.50 A
T
amb
= 60
C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
-
0.37 A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
10
A
P
RSM
non-repetitive peak reverse power
dissipation
t = 20
s half sinewave;
T
j
= T
j max
prior to surge
-
200
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.5
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
tzt
forward voltage
I
F
= 0.5 A; T
j
= T
j max
; see Fig.6
-
-
0.91
V
I
F
= 0.5 A; see Fig.6
-
-
1.06
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BYD11D
225
-
-
V
BYD11G
450
-
-
V
BYD11J
650
-
-
V
BYD11K
900
-
-
V
BYD11M
1100
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.7
-
-
1
A
V
R
= V
RRMmax
; T
j
= 165
C; see Fig.7
-
-
75
A
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
-
3
-
s
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
-
14
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
GRAPHICAL DATA
handbook, halfpage
0
40
200
0.8
0.6
0.2
0
0.4
MBG042
80
120
160
IF(AV)
(A)
Ttp (
o
C)
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Lead length 10 mm.
handbook, halfpage
0
40
200
0.8
0.6
0.2
0
0.4
MBG051
80
120
160
IF(AV)
(A)
Tamb (
o
C)
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.9.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
handbook, halfpage
0
0.2
0.4
0.6
0.8
0.6
0.2
0
0.4
MBG634
IF (AV) (A)
P
(W)
a
=
3
1.57
1.42
2.5
2
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
500
1000
200
0
100
MCD583
VR (V)
( C)
o
j
T
D
G
J
K
M
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.6
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
4
3
1
0
2
MBG047
IF
(A)
VF (V)
2
1
Fig.7
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
100
10
1
10
10
o
Tj
C
(
)
MCD582
IR
3
2
(
A)
V
R
= V
RRMmax
.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
1
MBG025
10
10
2
10
3
10
-
1
10
1
1
Cd
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
1996 Sep 26
6
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 Sep 26
7
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
The marking band indicates the cathode.
Fig.11 SOD91.
handbook, full pagewidth
MBC053
1.7
max
29 min
29 min
3.0 max
3.5 max
0.55
max
Document Outline
- FEATURES
- DESCRIPTION
- MARKING
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
PDF 
ZIP