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Электронный компонент: BYD127

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DATA SHEET
Product specification
Supersedes data of 1999 Feb 10
1999 Nov 15
DISCRETE SEMICONDUCTORS
BYD127
Ultra fast low-loss rectifier
book, halfpage
M3D121
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1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
TM
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
200
V
V
R
continuous reverse voltage
-
200
V
I
F(AV)
average forward current
T
tp
= 145
C;
averaged over any 20 ms period;
see Figs 5 and 6
-
1
A
T
tp
= 95
C;
averaged over any 20 ms period;
see Figs 5 and 6
-
2
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
V
R
= V
RRMmax
-
25
A
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; see Fig.2; T
j
= 150
C;
0.8
V
I
F
= 1 A; see Fig.2
0.93
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.3
2
A
V
R
= V
RRMmax
; T
j
= 150
C; see Fig.3
50
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
25
ns
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1999 Nov 15
3
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.7.
For more information please refer to the
"General part of the associated handbook".
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
30
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
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1999 Nov 15
4
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
2
10
0
2
MGR648
4
6
8
0.4
0.8
1.2
1.6
VF (V)
IF
(A)
Tj = 175
C
100
C
25
C
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
200
80
0
160
40
120
10
2
10
1
10
-
1
10
-
2
10
-
3
MGR651
IR
(
A)
VR (V)
Tj = 175
C
100
C
25
C
Fig.4
Diode capacitance as a function of
reverse voltage; typical values.
handbook, halfpage
MGR639
10
2
10
1
1
10
10
2
Tj = 25
C
VR (V)
Cd
(pF)
Fig.5
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
200
4
0
1
MGR643
2
3
40
80
120
160
Ttp (
C)
IF(AV)
(A)
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1999 Nov 15
5
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
0
1
MGR654
2
3
0.4
0.8
1.2
1.6
P
(W)
a = 3
2.5
2.0
1.57
1.42
IF(AV) (A)
MSB213
4.5
2.5
1.25
50
50
Fig.7 Printed-circuit board for surface mounting.
Dimensions in mm.
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1999 Nov 15
6
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD87
100H03
99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
Implotec
TM(1)
technology; 2 connectors
SOD87
UNIT
D
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D1
H
L
DIMENSIONS (mm are the original dimensions)
H
D
D1
L
L
(2)
0
1
2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
k
a
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1999 Nov 15
7
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD127
NOTES
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Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
Philips Semiconductors a worldwide company
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Printed in The Netherlands
135002/03/pp
8
Date of release:
1999 Nov 15
Document order number:
9397 750 06277