DATA SHEET
Product specification
Supersedes data of April 1992
1996 May 24
DISCRETE SEMICONDUCTORS
BYD13 series
Controlled avalanche rectifiers
book, halfpage
M3D119
1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
TM
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD13D
13D PH
BYD13G
13G PH
BYD13J
13J PH
BYD13K
13K PH
BYD13M
13M PH
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD13D
-
200
V
BYD13G
-
400
V
BYD13J
-
600
V
BYD13K
-
800
V
BYD13M
-
1000
V
V
RWM
crest working reverse voltage
BYD13D
-
200
V
BYD13G
-
400
V
BYD13J
-
600
V
BYD13K
-
800
V
BYD13M
-
1000
V
V
R
continuous reverse voltage
BYD13D
-
200
V
BYD13G
-
400
V
BYD13J
-
600
V
BYD13K
-
800
V
BYD13M
-
1000
V
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.9.
For more information please refer to the
"General Part of associated Handbook".
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
-
1.40
A
T
amb
= 65
C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
-
0.75
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
7
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.5
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.6
-
-
0.93
V
I
F
= 1 A; see Fig.6
-
-
1.05
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BYD13D
225
-
-
V
BYD13G
450
-
-
V
BYD13J
650
-
-
V
BYD13K
900
-
-
V
BYD13M
1100
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.7
-
-
1
A
V
R
= V
RRMmax
; T
j
= 165
C; see Fig.7
-
-
100
A
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
-
3
-
s
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
-
21
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 May 24
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Lead length 10 mm.
handbook, halfpage
0
200
2.0
0
0.4
MBG039
0.8
1.2
1.6
40
80
120
160
IF(AV)
(A)
Ttp (
o
C)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.9.
handbook, halfpage
0
200
1.0
0
0.2
MBG055
0.4
0.6
0.8
40
80
120
160
IF(AV)
(A)
Tamb (
o
C)
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
handbook, halfpage
0
0.4
0.8
1.6
2.5
0
2.0
MGC741
1.2
1.5
1.0
0.5
2.5
2
P
(W)
I
F(AV)
(A)
1.42
a = 3
1.57
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
D
G
J
K
M
400
800
1200
200
0
100
50
150
MGC736
Tj
VR, VRRM (V)
( C)
o
1996 May 24
5
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.6
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
6
4
2
0
2
1
MBG048
IF
(A)
VF (V)
Fig.7
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
10
3
MGC739
10
2
10
1
160
120
40
80
(
A)
I
R
T
j
(
o
C)
V
R
= V
RRMmax
.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
1
MGC740
10
10
2
10
3
1
10
2
10
(pF)
C
d
V
R
(V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
1996 May 24
6
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 May 24
7
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Fig.11 SOD81.
handbook, full pagewidth
MBC051
5 max
3.8 max
28 min
28 min
0.81
max
2.15
max
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