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Электронный компонент: BYD31K

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DATA SHEET
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYD31 series
Fast soft-recovery
controlled avalanche rectifiers
M3D122
andbook, halfpage
background image
1996 Sep 18
2
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
TM
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD31D
-
200
V
BYD31G
-
400
V
BYD31J
-
600
V
BYD31K
-
800
V
BYD31M
-
1000
V
V
R
continuous reverse voltage
BYD31D
-
200
V
BYD31G
-
400
V
BYD31J
-
600
V
BYD31K
-
800
V
BYD31M
-
1000
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
see Fig.2; averaged over any
20 ms period;
see also Fig.6
-
440
mA
T
amb
= 60
C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
-
320
mA
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Fig.4
-
4
A
T
amb
= 60
C; see Fig.5
-
3
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
5
A
background image
1996 Sep 18
3
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
P
RSM
non-repetitive peak reverse power
dissipation
t = 20
s half sine wave; T
j
= T
j max
prior to surge
BYD31D to J
-
100
W
BYD31K and M
-
50
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.7
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 0.5 A; T
j
= T
j max
;
see Fig.8
-
-
1.15
V
I
F
= 0.5 A;
see Fig.8
-
-
1.35
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD31D
300
-
-
V
BYD31G
500
-
-
V
BYD31J
700
-
-
V
BYD31K
900
-
-
V
BYD31M
1100
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.9
-
-
1
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.9
-
-
75
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25A
see Fig.12
BYD31D to J
-
-
250
ns
BYD31K and M
-
-
300
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Fig.10
-
9
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
-
1 A/
s;
see Fig.13
BYD31D to J
-
-
6
A/
s
BYD31K and M
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
dI
R
dt
--------
background image
1996 Sep 18
4
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.11.
For more information please refer to the
"General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
background image
1996 Sep 18
5
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
GRAPHICAL DATA
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
0.6
IF(AV)
0.4
0.2
0
200
MGC517
100
o
Ttp ( C)
(A)
lead length 10 mm
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
0.6
0.4
0.2
0
200
MGC518
100
IF(AV)
o
Tamb ( C)
(A)
T
tp
= 55
C; R
th j-tp
= 180 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD580
10
-
1
10
0
10
1
10
2
10
3
10
4
tp (ms)
10
-
2
5.0
0
2.5
(A)
I FRM
=
0.05
0.1
0.2
0.5
1
background image
1996 Sep 18
6
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
T
amb
= 60
C; R
th j-a
= 250 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD586
10
-
1
10
0
10
1
10
2
10
3
10
4
tp (ms)
10
-
2
(A)
I FRM
4
1
0
2
3
=
0.05
0.2
0.5
0.1
1
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
0.25
0.50
1.0
0
0.5
MCD584
I
F(AV)
(A)
(W)
P
a = 3
a = 1.57
1.42
2.5
2
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
500
1000
200
0
100
MCD583
VR (V)
( C)
o
j
T
D
G
J
K
M
background image
1996 Sep 18
7
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.8
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
3
2
1
0
0
1
2
3
IF
(A)
VF (V)
MCD585
V
R
= V
RRMmax
.
Fig.9
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
100
10
1
10
10
o
Tj
C
(
)
MCD582
IR
3
2
(
A)
f = 1 MHz; T
j
= 25
C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGC516
10
10
2
2
5
10
3
1
10
Cd
(pF)
VR (V)
Fig.11 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
background image
1996 Sep 18
8
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
Fig.12 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.13 Reverse recovery definitions.
andbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
background image
1996 Sep 18
9
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.14 SOD91.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC053
1.7
max
29 min
29 min
3.0 max
3.5 max
0.55
max

Document Outline