DATA SHEET
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
k, halfpage
M3D119
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
TM
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD33D
-
200
V
BYD33G
-
400
V
BYD33J
-
600
V
BYD33K
-
800
V
BYD33M
-
1000
V
BYD33U
-
1200
V
BYD33V
-
1400
V
V
R
continuous reverse voltage
BYD33D
-
200
V
BYD33G
-
400
V
BYD33J
-
600
V
BYD33K
-
800
V
BYD33M
-
1000
V
BYD33U
-
1200
V
BYD33V
-
1400
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M
-
1.30
A
BYD33U and V
-
1.26
A
I
F(AV)
average forward current
T
amb
= 65
C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M
-
0.70
A
BYD33U and V
-
0.67
A
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Figs 6 and 7
BYD33D to M
-
12
A
BYD33U and V
-
11
A
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
amb
= 65
C; see Figs 8 and 9
BYD33D to M
-
7
A
BYD33U and V
-
6
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
BYD33D to J
-
10
mJ
BYD33K to V
-
7
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Figs 12 and 13
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
-
-
1.1
V
I
F
= 1 A;
see Figs 14 and 15
-
-
1.3
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD33D
300
-
-
V
BYD33G
500
-
-
V
BYD33J
700
-
-
V
BYD33K
900
-
-
V
BYD33M
1100
-
-
V
BYD33U
1300
-
-
V
BYD33V
1500
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.16
-
-
1
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.16
-
-
100
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
see Fig.21
BYD33D to J
-
-
250
ns
BYD33K and M
-
-
300
ns
BYD33U and V
-
-
500
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
-
20
-
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.19.
For more information please refer to the
"General Part of associated Handbook".
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
-
1 A/
s;
see Fig.20
BYD33D to J
-
-
6
A/
s
BYD33K to V
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1996 Sep 18
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
GRAPHICAL DATA
BYD33D to M
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
0
MGA857
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
lead length 10 mm
BYD33U and V
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
0
MLB905
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
lead length 10 mm
BYD33D to M
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.4
1.2
MLB902
100
I F(AV)
(A)
T ( C)
o
0.8
amb
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD33U and V
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
handbook, halfpage
0
200
0
0.4
1.2
MLB906
100
I F(AV)
(A)
T ( C)
o
0.8
amb
PDF 
ZIP