Fast soft-recovery controlled avalanche rectifiers
DATA SHEET
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
k, halfpage
M3D119
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
TM
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD33D
-
200
V
BYD33G
-
400
V
BYD33J
-
600
V
BYD33K
-
800
V
BYD33M
-
1000
V
BYD33U
-
1200
V
BYD33V
-
1400
V
V
R
continuous reverse voltage
BYD33D
-
200
V
BYD33G
-
400
V
BYD33J
-
600
V
BYD33K
-
800
V
BYD33M
-
1000
V
BYD33U
-
1200
V
BYD33V
-
1400
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M
-
1.30
A
BYD33U and V
-
1.26
A
I
F(AV)
average forward current
T
amb
= 65
C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M
-
0.70
A
BYD33U and V
-
0.67
A
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Figs 6 and 7
BYD33D to M
-
12
A
BYD33U and V
-
11
A
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
amb
= 65
C; see Figs 8 and 9
BYD33D to M
-
7
A
BYD33U and V
-
6
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
BYD33D to J
-
10
mJ
BYD33K to V
-
7
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Figs 12 and 13
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
-
-
1.1
V
I
F
= 1 A;
see Figs 14 and 15
-
-
1.3
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD33D
300
-
-
V
BYD33G
500
-
-
V
BYD33J
700
-
-
V
BYD33K
900
-
-
V
BYD33M
1100
-
-
V
BYD33U
1300
-
-
V
BYD33V
1500
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.16
-
-
1
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.16
-
-
100
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
see Fig.21
BYD33D to J
-
-
250
ns
BYD33K and M
-
-
300
ns
BYD33U and V
-
-
500
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
-
20
-
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.19.
For more information please refer to the
"General Part of associated Handbook".
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
-
1 A/
s;
see Fig.20
BYD33D to J
-
-
6
A/
s
BYD33K to V
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1996 Sep 18
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
GRAPHICAL DATA
BYD33D to M
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
0
MGA857
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
lead length 10 mm
BYD33U and V
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
0
MLB905
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
lead length 10 mm
BYD33D to M
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.4
1.2
MLB902
100
I F(AV)
(A)
T ( C)
o
0.8
amb
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD33U and V
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
handbook, halfpage
0
200
0
0.4
1.2
MLB906
100
I F(AV)
(A)
T ( C)
o
0.8
amb
1996 Sep 18
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
BYD33D to M
T
tp
= 55
C; R
th j-tp
= 60 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
12
0
4
10
2
1
10
10
2
10
3
10
4
MGA859
8
t (ms)
p
10
1
I FRM
(A)
2
6
10
= 0.05
0.1
0.2
0.5
1
BYD33U and V
T
tp
= 55
C; R
th j-tp
= 60 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
12
0
4
10
2
1
10
10
2
10
3
10
4
MLB909
8
t (ms)
p
10
1
I FRM
(A)
2
6
10
= 0.05
0.1
0.2
0.5
1
1996 Sep 18
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
BYD33D to M
T
amb
= 65
C; R
th j-a
= 120 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
4
10
2
1
10
10
2
10
3
10
4
MGA860
8
t (ms)
p
10
1
I FRM
(A)
2
6
0.2
0.1
0.5
1
= 0.05
BYD33U and V
T
amb
= 65
C; R
th j-a
= 120 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
4
10
2
1
10
10
2
10
3
10
4
MLB910
8
t (ms)
p
10
1
I FRM
(A)
2
6
0.2
0.1
0.5
1
= 0.05
1996 Sep 18
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
BYD33D to M
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MGA869
2.4
0
1.6
0.8
a = 3
2.5 2
P
(W)
I (A)
F(AV)
0.8
1.6
1.57
1.42
BYD33U and V
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MLB904
2.4
0
1.6
0.8
a = 3 2.5 2
P
(W)
I (A)
F(AV)
0.8
1.6
1.57
1.42
BYD33D to M
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
0
400
1200
0
MGA861
800
100
V (V)
R
Tj
( C)
o
D
G
J
K
M
BYD33U and V
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
handbook, halfpage
200
0
2000
0
MLB907
1000
100
V (V)
R
Tj
( C)
o
U
V
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Sep 18
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
BYD33D to M
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
2
3
8
0
4
2
6
MGC522
1
I F
(A)
V (V)
F
BYD33U and V
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.15 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
2
3
8
0
4
2
6
MGC523
1
I F
(A)
V (V)
F
Fig.16 Reverse current as a function of junction
temperature; maximum values.
V
R
= V
RRMmax
.
handbook, halfpage
10
3
10
2
10
1
200
0
MGA853
100
T ( C)
j
o
I R
( A)
BYD33D to M
f = 1 MHz; T
j
= 25
C.
Fig.17 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGA862
10
10
2
10
3
1
10
2
10
V (V)
R
C d
(pF)
D, G, J
K, M
1996 Sep 18
10
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
BYD33U and V
f = 1 MHz; T
j
= 25
C.
Fig.18 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MLB908
10
10
2
10
3
1
10
2
10
V (V)
R
C d
(pF)
Fig.19 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.20 Reverse recovery definitions.
ndbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Sep 18
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
Fig.21 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 Sep 18
12
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.22 SOD81.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC051
5 max
3.8 max
28 min
28 min
0.81
max
2.15
max
Document Outline
- FEATURES
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
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