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Электронный компонент: BYD53J

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DATA SHEET
Product specification
Supersedes data of 1996 Sep 18
1998 Dec 04
DISCRETE SEMICONDUCTORS
BYD53 series
Fast soft-recovery controlled
avalanche rectifiers
book, halfpage
M3D119
background image
1998 Dec 04
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
TM
(1)
technology. The SOD81 package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD53D
-
200
V
BYD53G
-
400
V
BYD53J
-
600
V
BYD53K
-
800
V
BYD53M
-
1000
V
BYD53U
-
1200
V
BYD53V
-
1400
V
V
R
continuous reverse voltage
BYD53D
-
200
V
BYD53G
-
400
V
BYD53J
-
600
V
BYD53K
-
800
V
BYD53M
-
1000
V
BYD53U
-
1200
V
BYD53V
-
1400
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD53D to M
-
0.75
A
BYD53U and V
-
0.85
A
I
F(AV)
average forward current
T
amb
= 65
C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD53D to M
-
0.40
A
BYD53U and V
-
0.45
A
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Figs 6 and 7
BYD53D to M
-
6.5
A
BYD53U and V
-
8.25
A
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1998 Dec 04
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
amb
= 65
C; see Figs 8 and 9
BYD53D to M
-
3.6
A
BYD53U and V
-
4.45
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
5
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.12
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 13 and 14
BYD53D to M
-
-
2.1
V
BYD53U and V
-
-
1.7
V
V
F
forward voltage
I
F
= 1 A; see Figs 13 and 14
BYD53D to M
-
-
3.6
V
BYD53U and V
-
-
2.3
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BYD53D
300
-
-
V
BYD53G
500
-
-
V
BYD53J
700
-
-
V
BYD53K
900
-
-
V
BYD53M
1100
-
-
V
BYD53U
1300
-
-
V
BYD53V
1500
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.15
-
-
1
A
V
R
= V
RRMmax
; T
j
= 165
C;
see Fig.15
-
-
100
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.18
BYD53D to J
-
-
30
ns
BYD53K and M
-
-
75
ns
BYD53U and V
-
-
150
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.16
-
20
-
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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1998 Dec 04
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.17.
For more information please refer to the
`General Part of associated Handbook'.
maximum slope of reverse
recovery current
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
-
1 A/
s;
see Fig.19
BYD53D to J
-
-
7
A/
s
BYD53K and M
-
-
6
A/
s
BYD53U and V
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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1998 Dec 04
5
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYD53D to M
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
handbook, halfpage
0
200
160
120
1.0
0
0.2
MGM267
0.4
0.6
0.8
80
40
IF(AV)
(A)
Ttp (
C)
BYD53U and V
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
0
MLC303
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
lead length 10 mm
handbook, halfpage
0
0.6
0.4
0.2
0
200
80
120
160
40
MGM266
IF(AV)
(A)
Tamb (
C)
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD53U and V
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.2
0.8
0.6
MLC304
100
I F(AV)
(A)
T ( C)
o
0.4
amb
BYD53D to M
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
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1998 Dec 04
6
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
BYD53D to M
T
tp
= 55
C; R
th j-tp
= 60 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
8
2
0
6
4
MGM269
10
-
2
10
-
1
1
10
10
2
10
3
10
4
IFRM
(A)
tp (ms)
= 0.05
0.1
0.2
0.5
1
BYD53U and V
T
tp
= 55
C; R
th j-tp
= 60 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
4
10
2
1
10
10
2
10
3
10
4
MLC307
8
t (ms)
p
10
1
I FRM
(A)
2
6
10
= 0.05
0.1
0.2
0.5
1
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1998 Dec 04
7
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
BYD53D to M
T
amb
= 65
C; R
th j-a
= 120 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
4
1
0
3
2
MGM268
10
-
2
10
-
1
1
10
10
2
10
3
10
4
IFRM
(A)
tp (ms)
= 0.05
0.1
0.2
0.5
1
BYD53U and V
T
amb
= 65
C; R
th j-a
= 120 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
2
10
2
1
10
10
2
10
3
10
4
MLC308
4
t (ms)
p
10
1
I FRM
(A)
1
3
5
= 0.05
0.1
0.2
0.5
1
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1998 Dec 04
8
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
BYD53D to M
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
1.0
4
3
1
0
2
0.6
2
1.57
1.42
0.8
0.4
0.2
MGM265
P
(W)
IF(AV) (A)
a = 3 2.5
BYD53U and V
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MLC302
3
0
2
1
a = 3 2.5
2
P
(W)
I (A)
F(AV)
0.5
1.0
1.57
1.42
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
0
2000
0
MBK457
1000
100
V (V)
R
Tj
( C)
o
U
V
D
G
J
K
M
BYD53D to M
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
6
4
2
0
10
4
2
6
8
MGM264
IF
(A)
VF (V)
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1998 Dec 04
9
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
BYD53U and V
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
5
4
6
0
2
4
MLC301
2
3
1
I F
(A)
V (V)
F
V
R
= V
RRMmax
.
Fig.15 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
2
10
1
200
0
MGA853
100
T ( C)
j
o
I R
( A)
f = 1 MHz; T
j
= 25
C.
Fig.16 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MLC305
10
10
2
10
3
1
10
2
10
V (V)
R
Cd
(pF)
Fig.17 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
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1998 Dec 04
10
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1
IF
(A)
IR
(A)
t
0.25
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
Fig.19 Reverse recovery definitions.
andbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
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1998 Dec 04
11
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD53 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
Notes
1. Implotec is a trademark of Philips.
2. The marking band indicates the cathode.
SOD81
97-06-20
Hermetically sealed glass package;
Implotec
TM(1)
technology; axial leaded; 2 leads
SOD81
UNIT
b
max.
mm
0.81
D
max.
G1
max.
5
28
G
3.8
2.15
G
max.
L
min.
DIMENSIONS (mm are the original dimensions)
G1
L
D
L
b
(2)
0
1
2 mm
scale
k
a
background image
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Printed in The Netherlands
135106/00/04/pp12
Date of release: 1998 Dec 04
Document order number:
9397 750 04887