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Электронный компонент: BYD71A

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DATA SHEET
Product specification
Supersedes data of 1996 May 24
1996 Sep 19
DISCRETE SEMICONDUCTORS
BYD71 series
Ultra fast low-loss
controlled avalanche rectifiers
M3D122
book, halfpage
1996 Sep 19
2
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical SOD91 glass
package through Implotec
TM
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD71A
-
50
V
BYD71B
-
100
V
BYD71C
-
150
V
BYD71D
-
200
V
BYD71E
-
250
V
BYD71F
-
300
V
BYD71G
-
400
V
V
R
continuous reverse voltage
BYD71A
-
50
V
BYD71B
-
100
V
BYD71C
-
150
V
BYD71D
-
200
V
BYD71E
-
250
V
BYD71F
-
300
V
BYD71G
-
400
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD71A to D
-
0.56
A
BYD71E to G
-
0.54
A
I
F(AV)
average forward current
T
amb
= 60
C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD71A to D
-
0.43
A
BYD71E to G
-
0.41
A
1996 Sep 19
3
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Figs 6 and 7
BYD71A to D
-
4.7
A
BYD71E to G
-
5.0
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; see Figs 8 and 9
BYD71A to D
-
3.7
A
BYD71E to G
-
3.9
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
7
A
P
RSM
non-repetitive peak reverse power
dissipation
t = 20
s half sine wave; T
j
= T
j max
prior to surge
BYD71A to D
-
250
W
BYD71E to G
-
150
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 0.5 A; T
j
= T
j max
;
see Figs 12 and 13
BYD71A to D
-
-
0.84
V
BYD71E to G
-
-
0.90
V
V
F
forward voltage
I
F
= 0.5 A;
see Figs 12 and 13
BYD71A to D
-
-
1.05
V
BYD71E to G
-
-
1.11
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD71A
55
-
-
V
BYD71B
110
-
-
V
BYD71C
165
-
-
V
BYD71D
220
-
-
V
BYD71E
275
-
-
V
BYD71F
330
-
-
V
BYD71G
440
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig 14
-
-
1
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig 14
-
-
75
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
see Fig 18
BYD71A to D
-
-
25
ns
BYD71E to G
-
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 19
4
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.16.
For more information please refer to the
"General Part of associated Handbook".
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Fig.15
BYD71A to D
-
25
-
pF
BYD71E to G
-
20
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
-
1 A/
s;
see Fig.17
BYD71A to D
-
-
4
A/
s
BYD71E to G
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1996 Sep 19
5
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
GRAPHICAL DATA
BYD71A to D
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0.8
0.6
0.2
0
0.4
MCD565
100
IF(AV)
(A)
Ttp ( C)
o
lead length 10 mm
BYD71E to G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0.8
0.6
0.2
0
0.4
MCD564
100
IF(AV)
(A)
Ttp ( C)
o
lead length 10 mm
BYD71A to D
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
0.6
0.4
0.2
0
200
MGC526
100
IF(AV)
(A)
Tamb ( C)
o
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD71E to G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
handbook, halfpage
0
0.6
0.4
0.2
0
200
MGC527
100
IF(AV)
(A)
Tamb ( C)
o
1996 Sep 19
6
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
BYD71A to D
T
tp
= 55
C; R
th j-tp
= 180 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD563
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
5.0
0
2.5
t p (ms )
(A)
I FRM
0.1
0.2
0.5
1
=
0.05
BYD71E to G
T
tp
= 55
C; R
th j-tp
= 180 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
MCD562
0.1
0.2
0.5
1
t p (ms)
(A)
I FRM
5.0
2.5
0
=
0.05
1996 Sep 19
7
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
BYD71A to D
T
amb
= 60
C; R
th j-a
= 250 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
4
1
0
2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
3
MCD561
tp (ms)
(A)
I FRM
0.2
1
=
0.05
0.1
0.5
BYD71E to G
T
amb
= 60
C; R
th j-a
= 250 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
4
1
0
2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
3
MCD560
t p (ms )
(A)
I FRM
0.2
1
=
0.05
0.1
0.5
1996 Sep 19
8
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
BYD71A to D
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
MCD567
0
0.25
0.50
0.50
0
0.25
(W)
P
I
F(AV)
(A)
2
2.5
a = 3
a = 1.57
1.42
BYD71E to G
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
I
F(AV)
(A)
0
0.25
0.50
0.50
0
0.25
MCD566
(W)
P
1.42
2
a = 3
a = 1.57
2.5
BYD71A to D
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
4
5
0
4
MCD568
3
3
2
1
IF
(A)
VF (V)
BYD71E to G
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
3
5
0
4
MCD569
3
2
1
IF
(A)
VF (V)
1996 Sep 19
9
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
Fig.14 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
100
10
1
10
10
o
Tj
C
(
)
MCD582
IR
3
2
(
A)
V
R
= V
RRMmax
.
f = 1 MHz; T
j
= 25
C.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MCD559
10
1
10
10
10
10
A, B, C, D
E, F, G
2
2
3
V
R
(V)
C
d
(pF)
Fig.16 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.17 Reverse recovery definitions.
dbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Sep 19
10
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1
IF
(A)
IR
(A)
t
0.25
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
1996 Sep 19
11
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.19 SOD91.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC053
1.7
max
29 min
29 min
3.0 max
3.5 max
0.55
max