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DATA SHEET
Product specification
Supersedes data of 1996 May 24
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
ok, halfpage
M3D119
1996 Sep 18
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
TM
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD73A
-
50
V
BYD73B
-
100
V
BYD73C
-
150
V
BYD73D
-
200
V
BYD73E
-
250
V
BYD73F
-
300
V
BYD73G
-
400
V
V
R
continuous reverse voltage
BYD73A
-
50
V
BYD73B
-
100
V
BYD73C
-
150
V
BYD73D
-
200
V
BYD73E
-
250
V
BYD73F
-
300
V
BYD73G
-
400
V
I
F(AV)
average forward current
T
tp
= 55
C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD73A to D
-
1.75
A
BYD73E to G
-
1.70
A
I
F(AV)
average forward current
T
amb
= 60
C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD73A to D
-
1.00
A
BYD73E to G
-
0.95
A
1996 Sep 18
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 55
C; see Figs 6 and 7
BYD73A to D
-
14
A
BYD73E to G
-
15
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; see Figs 8 and 9
BYD73A to D
-
8.5
A
BYD73E to G
-
9.5
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
25
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 12 and 13
BYD73A to D
-
-
0.75
V
BYD73E to G
-
-
0.83
V
V
F
forward voltage
I
F
= 1 A;
see Figs 12 and 13
BYD73A to D
-
-
0.98
V
BYD73E to G
-
-
1.05
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD73A
55
-
-
V
BYD73B
110
-
-
V
BYD73C
165
-
-
V
BYD73D
220
-
-
V
BYD73E
275
-
-
V
BYD73F
330
-
-
V
BYD73G
440
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.14
-
-
1
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.14
-
-
100
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.18
BYD73A to D
-
-
25
ns
BYD73E to G
-
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 18
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.16.
For more information please refer to the
"General Part of associated Handbook".
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Fig.15
BYD73A to D
-
50
-
pF
BYD73E to G
-
40
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
-
1 A/
s;
see Fig.17
BYD73A to D
-
-
4
A/
s
BYD73E to G
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1996 Sep 18
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
GRAPHICAL DATA
BYD73A to D
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
2.0
0
0.4
MGC535
0.8
1.2
1.6
100
IF(AV)
(A)
Ttp ( C)
o
lead length 10 mm
BYD73E to G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
2.0
0
0.4
MGC536
0.8
1.2
1.6
100
IF(AV)
(A)
Ttp ( C)
o
lead length 10 mm
BYD73A to D
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
1.6
IF(AV)
1.2
0.4
0
0.8
MGC538
100
Tamb ( C)
o
(A)
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD73E to G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
handbook, halfpage
0
200
1.6
IF(AV)
1.2
0.4
0
0.8
MGC537
100
Tamb ( C)
o
(A)
1996 Sep 18
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
BYD73A to D
T
tp
= 55
C; R
th j-tp
= 60 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
16
0
8
10
-
2
10
-
1
1
10
2
10
3
10
4
MCD605
t p (ms)
0.2
1
10
0.1
I
FRM
(A)
=
0.05
0.5
BYD73E to G
T
tp
= 55
C; R
th j-tp
= 60 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
16
0
8
10
-2
10
-1
10
10
2
10
3
10
4
MCD607
I
FRM
(A)
t p (ms)
0.2
1
0.1
=
0.05
1
0.5
1996 Sep 18
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
BYD73A to D
T
amb
= 60
C; R
th j-a
= 120 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
0
5
10
-2
10
-1
10
2
10
3
10
4
MCD604
t p (ms)
0.5
1
I
FRM
(A)
10
1
=
0.05
0.1
0.2
BYD73E to G
T
amb
= 60
C; R
th j-a
= 120 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
0
5
10
-2
10
-1
10
2
10
3
10
4
MCD606
t p (ms)
1
=
0.05
0.1
0.5
I
FRM
(A)
10
1
0.2
1996 Sep 18
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
BYD73A to D
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
2
P
(W)
a=3
0
MGC539
1
1
2.5 2 1.57 1.42
IF(AV) (A)
BYD73E to G
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
2
P
(W)
0
MGC540
1
1
IF(AV) (A)
2.5 2 1.57 1.42
a=3
BYD73A to D
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
10
8
4
0
2
6
MCD594
VF (V)
IF
(A)
BYD73E to G
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
3
10
IF
0
8
MGC531
6
4
2
(A)
VF (V)
1996 Sep 18
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
Fig.14 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
2
10
1
200
0
MGA853
100
T ( C)
j
o
I R
( A)
V
R
= V
RRMmax
.
f = 1 MHz; T
j
= 25
C.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MCD608
10
10
10
1
10
10
VR (V)
Cd
(pF)
2
2
3
A, B, C, D
E, F, G
Fig.16 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.17 Reverse recovery definitions.
andbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Sep 18
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 Sep 18
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.19 SOD81.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
MBC051
5 max
3.8 max
28 min
28 min
0.81
max
2.15
max
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