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Электронный компонент: BYD77B

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DATA SHEET
Product specification
Supersedes data of 1996 May 24
1999 Nov 15
DISCRETE SEMICONDUCTORS
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
book, halfpage
M3D121
background image
1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Shipped in 8 mm embossed tape
Smallest surface mount
rectifier outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
TM
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD77A
-
50
V
BYD77B
-
100
V
BYD77C
-
150
V
BYD77D
-
200
V
BYD77E
-
250
V
BYD77F
-
300
V
BYD77G
-
400
V
V
R
continuous reverse voltage
BYD77A
-
50
V
BYD77B
-
100
V
BYD77C
-
150
V
BYD77D
-
200
V
BYD77E
-
250
V
BYD77F
-
300
V
BYD77G
-
400
V
I
F(AV)
average forward current
T
tp
= 105
C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D
-
2.00
A
BYD77E to G
-
1.85
A
I
F(AV)
average forward current
T
amb
= 60
C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D
-
0.85
A
BYD77E to G
-
0.80
A
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1999 Nov 15
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 105
C; see Figs 6 and 7
BYD77A to D
-
15
A
BYD77E to G
-
13
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; see Figs 8 and 9
BYD77A to D
-
8.5
A
BYD77E to G
-
8.0
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
-
25
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= 25
C prior to
surge; inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 12 and 13
BYD77A to D
-
-
0.75
V
BYD77E to G
-
-
0.83
V
V
F
forward voltage
I
F
= 1 A;
see Figs 12 and 13
BYD77A to D
-
-
0.98
V
BYD77E to G
-
-
1.05
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYD77A
55
-
-
V
BYD77B
110
-
-
V
BYD77C
165
-
-
V
BYD77D
220
-
-
V
BYD77E
275
-
-
V
BYD77F
330
-
-
V
BYD77G
440
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.14
-
-
1
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.14
-
-
100
A
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.18
BYD77A to D
-
-
25
ns
BYD77E to G
-
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
background image
1999 Nov 15
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.16.
For more information please refer to the
"General Part of associated Handbook".
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Fig.15
BYD77A to D
-
50
-
pF
BYD77E to G
-
40
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V and
dI
F
/dt =
-
1 A/
s;
see Fig.17
BYD77A to D
-
-
4
A/
s
BYD77E to G
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
30
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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1999 Nov 15
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
GRAPHICAL DATA
BYD77A to D
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
100
200
4
3
1
0
2
MCD598
Ttp ( C)
o
IF(AV)
(A)
BYD77E to G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
3
2
1
0
100
200
MCD596
o
tp
T
C)
(
I
F(AV)
(A)
BYD77A to D
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
1.2
0.8
0.4
0
100
200
MCD597
I
F(AV)
(A)
T ( C)
o
amb
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD77E to G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
handbook, halfpage
0
100
200
1.0
0
MCD595
0.5
I
F(AV)
(A)
T ( C)
o
amb
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1999 Nov 15
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
handbook, full pagewidth
MCD593
10
-1
10
0
10
1
10
2
10
3
10
4
t p (ms )
10
-2
20
0
10
(A)
I FRM
0.5
1
=
0.05
0.1
0.2
BYD77A to D
T
tp
= 105
C; R
th j-tp
= 30 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD591
10
-1
10
0
10
1
10
2
10
3
10
4
t p (ms )
10
-2
20
0
10
(A)
I FRM
0.5
1
0.2
0.1
=
0.05
BYD77E to G
T
tp
= 105
C; R
th j-tp
= 30 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
background image
1999 Nov 15
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
handbook, full pagewidth
MCD592
10
-1
10
0
10
1
10
2
10
3
10
4
t p (ms )
10
-2
10
0
5
(A)
I FRM
0.1
0.2
1
=
0.05
0.5
BYD77A to D
T
amb
= 60
C; R
th j-a
= 150 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD590
10
-1
10
0
10
1
10
2
10
3
10
4
t p (ms )
10
-2
10
0
5
(A)
I FRM
0.1
0.2
1
=
0.05
0.5
BYD77E to G
T
amb
= 60
C; R
th j-a
= 150 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
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1999 Nov 15
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
BYD77A to D
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
2
0
MGC530
1
1
P
(W)
IF(AV) (A)
a=3
2 1.57 1.42
2.5
BYD77E to G
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
2
0
MGC529
1
1
P
(W)
IF(AV) (A)
a=3
2 1.57 1.42
2.5
BYD77A to D
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
10
8
4
0
2
6
MCD594
VF (V)
IF
(A)
BYD77E to G
Dotted line: T
j
= 175
C.
Solid line: T
j
= 25
C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
3
10
IF
0
8
MGC531
6
4
2
(A)
VF (V)
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1999 Nov 15
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
Fig.14 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
2
10
1
200
0
MGA853
100
T ( C)
j
o
I R
( A)
V
R
= V
RRMmax
.
f = 1 MHz; T
j
= 25
C.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MCD608
10
10
10
1
10
10
VR (V)
Cd
(pF)
2
2
3
A, B, C, D
E, F, G
MSB213
4.5
2.5
1.25
50
50
Fig.16 Printed-circuit board for surface mounting.
Dimensions in mm.
Fig.17 Reverse recovery definitions.
ndbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
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1999 Nov 15
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
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1999 Nov 15
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD87
100H03
99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
Implotec
TM(1)
technology; 2 connectors
SOD87
UNIT
D
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D1
H
L
DIMENSIONS (mm are the original dimensions)
H
D
D1
L
L
(2)
0
1
2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
k
a
background image
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
Philips Semiconductors a worldwide company
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Printed in The Netherlands
135002/03/pp
12
Date of release:
1999 Nov 15
Document order number:
9397 750 06272