Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT93
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, high efficiency
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
BYV74-
300
400
500
ultra fast reverse recovery times and
V
RRM
Repetitive peak reverse
300
400
500
V
soft recovery characteristic. They are
voltage
intended for use in switched mode
V
F
Forward voltage
1.12
1.12
1.12
V
power supplies and high frequency
I
O(AV)
Average output current
30
30
30
A
circuits in general, where both low
(both diodes conducting)
conduction losses and low switching
t
rr
Reverse recovery time
60
60
60
ns
losses are essential.
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Anode 1 (a)
2
Cathode (k)
3
Anode 2 (a)
tab
Cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-300
-400
-500
V
RRM
Repetitive peak reverse voltage
-
300
400
500
V
V
RWM
Crest working reverse voltage
-
300
400
500
V
V
R
Continuous reverse voltage
T
mb
136C
-
300
400
500
V
I
O(AV)
Average output current (both
square wave;
= 0.5;
-
30
A
diodes conducting)
1
T
mb
94 C
sinusoidal; a = 1.57;
-
27
A
T
mb
98 C
I
O(RMS)
RMS output current (both
-
43
A
diodes conducting)
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
mb
94 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode.
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RRM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
112
A
2
s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1
2
3
tab
k
a1
a2
1
2
3
1 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
-
2.4
K/W
heatsink
both diodes conducting
-
-
1.4
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
45
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 15 A; T
j
= 150C
-
0.95
1.12
V
I
F
= 15 A
-
1.08
1.25
V
I
F
= 30 A
-
1.15
1.36
V
I
R
Reverse current (per diode)
V
R
= V
RRM
-
10
50
A
V
R
= V
RRM
; T
j
= 100 C
-
0.3
0.8
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F
= 2 A to V
R
30 V;
-
40
60
nC
diode)
dI
F
/dt = 20 A/
s
t
rr
Reverse recovery time (per
I
F
= 1 A to V
R
30 V;
-
50
60
ns
diode)
dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A to V
R
30 V;
-
4.2
5.2
A
(per diode)
dI
F
/dt = 50 A/
s; T
j
= 100C
V
fr
Forward recovery voltage (per
I
F
= 10 A; dI
F
/dt = 10 A/
s
-
2.5
-
V
diode)
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25C and 100C; per diode
Fig.6. Maximum I
rrm
at T
j
= 25C and 100C; per
diode
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
5
10
15
0
5
10
15
20
1.9
2.2
2.8
4
BYV44
IF(AV) / A
PF / W
a = 1.57
Rs = 0.0137
Vo = 0.89
Tmb(max) / C
150
138
126
114
102
time
time
V
F
V
fr
V
F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=20 A
Tj = 25 C
Tj = 100 C
0
5
10
15
20
25
0
5
10
15
20
25
30
D = 1.0
0.5
0.2
0.1
BYV44
Rs = 0.0137 Ohms
Vo = 0.8900 V
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
138
126
114
102
90
88
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF= 20 A
Tj = 25 C
Tj = 100 C
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25C; per diode
Fig.9. Transient thermal impedance per diode
Z
th j-mb
= f(t
p
)
0
0.5
1
1.5
2
0
10
20
30
40
50
BYV74
VF / V
IF / A
Tj = 25 C
Tj = 150 C
max
typ
0.1
0.01
10 s
0.1
1 ms
10 us
tp / s
Zth (K/W)
10
1
t
p
t
D
1
10
100
1000
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF = 20 A
2 A
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.10. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
2 max
12.7
max
2
4.6
max
21
max
0.4
1.6
0.5
min
13.6
min
4.4
5.5
1.15
0.95
11
0.5
M
2.2 max
dimensions within
this zone are
uncontrolled
1
2
3
4.25
4.15
13.6
14
15.2
max
August 1996
5
Rev 1.200
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.200
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