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DATA SHEET
Preliminary specification
File under Discrete Semiconductors, SC01
1996 Jun 05
DISCRETE SEMICONDUCTORS
BYG60 series
Fast soft-recovery
controlled avalanche rectifiers
ok, halfpage
M3D168
1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
cathode
band
Top view
Side view
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYG60D
-
200
V
BYG60G
-
400
V
BYG60J
-
600
V
BYG60K
-
800
V
BYG60M
-
1000
V
V
R
continuous reverse voltage
BYG60D
-
200
V
BYG60G
-
400
V
BYG60J
-
600
V
BYG60K
-
800
V
BYG60M
-
1000
V
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
= 100
C; see Fig.2
-
1.90
A
averaged over any 20 ms period;
Al
2
O
3
PCB mounting (see Fig.7);
T
amb
= 60
C; see Fig.3
-
0.90
A
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
T
amb
= 60
C; see Fig.3
-
0.65
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
25
A
1996 Jun 05
3
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
35
m, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.7.
For more information please refer to the
`General Part of Handbook SC01'.
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
BYG60D to J
-
10
mJ
BYG60K and M
-
7
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.4
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.5
-
-
0.98
V
I
F
= 1 A; see Fig.5
-
-
1.20
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BYG60D
300
-
-
V
BYG60G
500
-
-
V
BYG60J
700
-
-
V
BYG60K
900
-
-
V
BYG60M
1100
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.6
-
-
5
A
V
R
= V
RRMmax
; T
j
= 165
C;
see Fig.6
-
-
100
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.8
BYG60D to J
-
-
250
ns
BYG60K and M
-
-
300
ns
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
BYG60D to J
-
30
-
pF
BYG60K and M
-
25
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
25
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Jun 05
4
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
V
R
= V
RRMmax
;
= 0.5; a = 1.57.
handbook, halfpage
0
200
4
IF(AV)
(A)
3
1
0
2
MGD481
100
Ttp (
C)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
V
R
= V
RRMmax
;
= 0.5; a = 1.57
Device mounted as shown in Fig.7;
solid line: Al
2
O
3
PCB; dotted line: epoxy PCB.
handbook, halfpage
0
200
1.6
IF(AV)
(A)
1.2
0.4
0
0.8
MGD482
100
Tamb (
C)
Device mounted as shown in Fig.7
Solid line: Al
2
O
3
PCB
Dotted line: epoxy PCB.
Fig.4
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
Tj
(
C)
0
400
1200
0
MGD483
800
VR (V)
40
D
G
J
K
M
80
120
160
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
2
VF (V)
3
10
IF
(A)
0
8
MGD484
6
4
2
1996 Jun 05
5
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
Fig.6
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
10
3
MGC532
10
2
10
1
100
Tj ( C)
o
IR
(
A)
V
R
= V
RMMmax
.
Fig.7
Printed-circuit board for surface mounting.
Dimensions in mm.
Material: AL
2
O
3
or epoxy-glass.
MSB213
4.5
2.5
1.25
50
50
Fig.8 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1
IF
(A)
IR
(A)
t
0.25
1996 Jun 05
6
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
handbook, full pagewidth
MSA414
4.5
4.3
5.5
5.1
3.3
2.7
2.3
2.0
2.8
2.4
1.6
1.4
0.05
0.2
Marking band indicates the cathode.
Dimensions in mm.
Fig.9 SOD106.
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