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Электронный компонент: BYG80A

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DATA SHEET
Product specification
Supersedes data of 1996 May 24
1997 Nov 25
DISCRETE SEMICONDUCTORS
BYG80 series
Ultra fast low-loss
controlled avalanche rectifiers
ok, halfpage
M3D168
background image
1997 Nov 25
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYG80A
-
50
V
BYG80B
-
100
V
BYG80C
-
150
V
BYG80D
-
200
V
BYG80F
-
300
V
BYG80G
-
400
V
BYG80J
-
600
V
V
R
continuous reverse voltage
BYG80A
-
50
V
BYG80B
-
100
V
BYG80C
-
150
V
BYG80D
-
200
V
BYG80F
-
300
V
BYG80G
-
400
V
BYG80J
-
600
V
I
F(AV)
average forward current
T
tp
= 100
C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
-
2.4
A
BYG80F; BYG80G
-
2.3
A
BYG80J
-
2.0
A
I
F(AV)
average forward current
T
amb
= 60
C; AL
2
O
3
PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
-
1.25
A
BYG80F; BYG80G
-
1.15
A
BYG80J
-
0.95
A
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1997 Nov 25
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
F(AV)
average forward current
T
amb
= 60
C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
-
0.95
A
BYG80F; BYG80G
-
0.85
A
BYG80J
-
0.65
A
I
FRM
repetitive peak forward current
T
tp
= 100
C; see Figs 8, 9 and 10
BYG80A to D
-
21
A
BYG80F; BYG80G
-
21
A
BYG80J
-
18
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; AL
2
O
3
PCB mounting;
see Figs 11, 12 and 13
BYG80A to D
-
11
A
BYG80F; BYG80G
-
11
A
BYG80J
-
9
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; epoxy PCB mounting;
see Figs 14, 15 and 16
BYG80A to D
-
8
A
BYG80F; BYG80G
-
8
A
BYG80J
-
6
A
I
FSM
non-repetitive peak forward current
t = 8.3 ms half sine wave; T
j
= 25
C
prior to surge; V
R
= V
RRMmax
BYG80A to D
-
36
A
BYG80F; BYG80G; BYG80J
-
32
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.20
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 21, 22 and 23
BYG80A to D
-
-
0.67
V
BYG80F; BYG80G
-
-
0.73
V
BYG80J
-
-
0.96
V
V
F
forward voltage
I
F
= 1 A; see Figs 21, 22 and 23
BYG80A to D
-
-
0.93
V
BYG80F; BYG80G
-
-
0.98
V
BYG80J
-
-
1.20
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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1997 Nov 25
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
35
m, see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.27.
For more information please refer to the
"General Part of associated Handbook".
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
BYG80A
55
-
-
V
BYG80B
110
-
-
V
BYG80C
165
-
-
V
BYG80D
220
-
-
V
BYG80F
330
-
-
V
BYG80G
440
-
-
V
BYG80J
675
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Figs 24 and 25
-
-
10
A
I
R
reverse current
V
R
= V
RRMmax
; T
j
= 165
C;
see Figs 24 and 25
BYG80A to D
-
-
100
A
BYG80F; BYG80G and J
-
-
150
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.29
BYG80A to D
-
-
25
ns
BYG80F; BYG80G and J
-
-
50
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.26
BYG80A to D
-
90
-
pF
BYG80F; BYG80G
-
70
-
pF
BYG80J
-
65
-
pF
maximum slope of reverse
recovery current
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
-
1 A/
s;
see Fig.28
BYG80A to D
-
-
3
A/
s
BYG80F; BYG80G and J
-
-
4
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
25
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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1997 Nov 25
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYG80A to D
Switched mode application; V
R
= V
RRMmax
;
= 0.5; a = 1.42.
handbook, halfpage
0
200
100
Ttp (
oC)
4
3
IF(AV)
(A)
1
0
2
MGL081
BYG80F and G
Switched mode application; V
R
= V
RRMmax
;
= 0.5; a = 1.42.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
40
200
Ttp (
C)
IF(AV)
(A)
4
3
1
0
2
80
120
160
MBK454
BYG80J
Switched mode application.
V
R
= V
RRMmax
;
= 0.5; a = 1.42.
Fig.4
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
40
IFAV
(A)
200
4.0
3.0
1.0
0
2.0
80
120
160
Ttp (
C)
MGL094
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYG80A to D
Switched mode application; V
R
= V
RRMmax
;
= 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al
2
O
3
PCB; 2: epoxy PCB.
handbook, halfpage
0
(1)
(2)
200
100
Tamb (
C)
2
1.5
IF(AV)
(A)
0.5
0
1
MGL079
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1997 Nov 25
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
BYG80F and G
Switched mode application; V
R
= V
RRMmax
;
= 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al
2
O
3
PCB; 2: epoxy PCB.
Fig.6
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
(1)
(2)
200
100
Tamb (
C)
2
1.5
IF(AV)
(A)
0.5
0
1
MGL080
BYG80J
Switched mode application; V
R
= V
RRMmax
;
= 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al
2
O
3
PCB; 2: epoxy PCB.
Fig.7
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
0.4
0.8
1.2
1.6
40
(1)
(2)
IF(AV)
(A)
80
120
Tamb (
o
C)
160
MGL092
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80A to D
T
tp
= 100
C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 200 V.
handbook, full pagewidth
30
0
10
IFRM
(A)
20
MGL086
10
-
2
10
-
1
1
10
tP (ms)
10
2
10
3
10
4
= 0.05
1
0.1
0.2
0.5
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1997 Nov 25
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, full pagewidth
30
0
10
IFRM
(A)
20
MGL087
10
-
2
10
-
1
1
10
tP (ms)
10
2
10
3
10
4
= 0.05
1
0.1
0.2
0.5
BYGF and G
T
tp
= 100
C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
20
0
4
8
12
16
MGL096
10
-
2
10
-
1
1
IFRM
(A)
10
tP (ms)
10
2
10
3
10
4
0.5
1
0.1
= 0.05
0.2
BYG80J
T
tp
= 100
C; R
th j-tp
= 25 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
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1997 Nov 25
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80A to D
T
amb
= 60
C; R
th j-a
= 100 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 200 V.
handbook, full pagewidth
0
20
4
8
12
IFRM
(A)
16
MGL082
10
-
2
10
-
1
1
10
tp (ms)
10
2
10
3
0.2
0.5
1
0.1
= 0.05
handbook, full pagewidth
0
20
4
8
12
IFRM
(A)
16
MGL083
10
-
2
10
-
1
1
10
tp (ms)
10
2
10
3
0.2
0.5
1
0.1
= 0.05
BYG80F and G
T
amb
= 60
C; R
th j-a
= 100 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
background image
1997 Nov 25
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, full pagewidth
10
0
2
4
6
8
MGL093
10
-
2
10
-
1
1
IFRM
(A)
10
tP (ms)
10
2
10
3
10
4
0.2
0.5
1
0.1
= 0.05
BYG80J
T
amb
= 60
C; R
th j-a
= 100 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
10
2
4
6
IFRM
(A)
8
MGL084
10
-
2
10
-
1
1
10
tp (ms)
10
2
10
3
= 0.05
0.1
0.2
0.5
1
BYG80A to D
T
amb
= 60
C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 200 V.
Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
background image
1997 Nov 25
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, full pagewidth
0
10
2
4
6
IFRM
(A)
8
MGL085
10
-
2
10
-
1
1
10
tp (ms)
10
2
10
3
0.1
0.2
1
= 0.05
0.5
BYG80F and G
T
amb
= 60
C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 400 V.
Fig.15 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
8
2
0
4
6
MGL097
10
-
2
10
-
1
IFRM
(A)
10
tP (ms)
10
2
10
3
10
4
0.2
0.5
0.1
= 0.05
1
Fig.16 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYG80J
T
amb
= 60
C; R
th j-a
= 150 K/W.
V
RRMmax
during 1 -
; curves include derating for T
j max
at V
RRM
= 600 V.
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1997 Nov 25
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
Fig.17 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
BYG80A to D
a = I
F(RMS)
/I
F(AV)
; V
RRMmax
.
handbook, halfpage
0
2
1.42
IF(AV) (A)
4
8
6
P
(W)
2
0
4
MGL088
2.5
1.57
2
a = 3
BYG80F and G
a = I
F(RMS)
/I
F(AV)
; V
RRMmax
.
Fig.18 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
IF(AV) (A)
4
8
6
P
(W)
2
0
4
MGL089
1.42
2.5
1.57
2
a = 3
BYG80J
a = I
F(RMS)
/I
F(AV)
; V
RRMmax
.
Fig.19 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
2
IF(AV) (A)
4
8
6
P
(W)
2
0
4
MGL099
1.42
2.5
1.57
2
a = 3
Fig.20 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
handbook, halfpage
0
100
VR (%VRmax)
Tj
(
C)
200
0
100
50
MBK455
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1997 Nov 25
12
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
BYG80A to D
(1) T
j
= 175
C.
(2) T
j
= 25
C.
Fig.21 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
1
(1)
(2)
2
VF (V)
3
10
0
8
IF
(A)
6
4
2
MGL090
handbook, halfpage
0
2.0
10
0
2
4
6
8
0.4
(2)
IF
(A)
0.8
1.2
VF (V)
1.6
MGL091
(1)
Fig.22 Forward current as a function of forward
voltage; maximum values.
BYG80F and G
(1) T
j
= 175
C.
(2) T
j
= 25
C.
handbook, halfpage
0
1
IF
(A)
2
VF (V)
3
10
0
8
6
4
2
MGL098
(1)
(2)
Fig.23 Forward current as a function of forward
voltage; maximum values.
BYG80J
(1) T
j
= 175
C.
(2) T
j
= 25
C.
Fig.24 Reverse current as a function of junction
temperature; maximum values.
BYG80A to D
V
R
= V
RMMmax
.
handbook, halfpage
MGL095
0
100
200
10
3
10
2
10
1
(
A)
IR
Tj (
C)
background image
1997 Nov 25
13
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
handbook, halfpage
MGC549
0
100
200
10
3
10
2
10
1
(
A)
IR
Tj (
C)
Fig.25 Reverse current as a function of junction
temperature; maximum values.
BYG80F to J
V
R
= V
RMMmax
.
Fig.26 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
(1) BYG80A to D
(2) BYG80F and G
(3) BYG80J
handbook, halfpage
10
2
10
Cd
(pF)
1
MGL078
1
(1)
10
VR (V)
10
3
10
2
(2)
(3)
Fig.27 Printed-circuit board for surface mounting.
Dimensions in mm.
MSB213
4.5
2.5
1.25
50
50
handbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
Fig.28 Reverse recovery definitions.
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1997 Nov 25
14
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
Fig.29 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
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1997 Nov 25
15
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD106
97-06-09
DO-214AC
0
2.5
5 mm
scale
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
UNIT
b
A1
c
D
E
Q
mm
1.6
1.4
0.2
0.05
2.8
2.4
4.5
4.3
H
5.5
5.1
3.3
2.7
DIMENSIONS (mm are the original dimensions)
A
2.3
2.0
D
H
A
E
b
(1)
A1
Q
c
Note
1. The marking band indicates the cathode.
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1997 Nov 25
16
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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1997 Nov 25
17
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
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1997 Nov 25
18
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
background image
1997 Nov 25
19
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
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Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA56
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Printed in The Netherlands
117027/1200/02/pp20
Date of release: 1997 Nov 25
Document order number:
9397 750 02662