Philips Semiconductors
Product specification
Rectifier diodes
BYQ28X series
ultrafast
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
passivated
dual
epitaxial
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
rectifier diodes in a full pack plastic
envelope,
featuring
low
forward
BYQ28X-
100
150
200
voltage
drop,
ultra-fast
recovery
V
RRM
Repetitive peak reverse
100
150
200
V
times
and
soft
recovery
voltage
characteristic. They are intended for
V
F
Forward voltage
0.895
0.895
0.895
V
use in switched mode power supplies
I
O(AV)
Output current (both
10
10
10
A
and high frequency circuits in general
diodes conducting)
where low conduction and switching
t
rr
Reverse recovery time
25
25
25
ns
losses are essential.
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
V
RWM
Crest working reverse voltage
-
100
150
200
V
V
R
Continuous reverse voltage
1
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave
-
10
A
conducting)
2
= 0.5; T
hs
92 C
sinusoidal
-
9
A
a = 1.57; T
hs
95 C
I
O(RMS)
RMS forward current
-
14
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
10
A
per diode
T
hs
92 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
50
A
current per diode
t = 8.3 ms
-
55
A
sinusoidal; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
12.5
A
2
s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1 2 3
case
k
a1
a2
1
3
2
1 T
hs
148C for thermal stability.
2 Neglecting switching and reverse current losses
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.7
K/W
heatsink
without heatsink compound
-
-
6.7
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 5 A; T
j
= 150C
-
0.80
0.895
V
I
F
= 5 A
-
0.95
1.10
V
I
F
= 10 A
-
1.10
1.25
V
I
R
Reverse current (per diode)
V
R
= V
RWM
; T
j
= 100 C
-
0.1
0.2
mA
V
R
= V
RWM
-
2
10
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
4
9
nC
diode)
t
rr1
Reverse recovery time (per
I
F
= 1 A; V
R
30 V;
-
15
25
ns
diode)
-dI
F
/dt = 100 A/
s
t
rr2
Reverse recovery time (per
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
10
20
ns
diode)
V
fr
Forward recovery voltage (per
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
diode)
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28X series
ultrafast
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V F
V
fr
V F
I
F
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
BYQ28
IF(AV) / A
PF / W
Ths(max) / C
150
144.3
138.6
132.9
127.2
121.5
115.8
110.1
104.4
D =
t
p
t
p
T
T
t
I
Vo = 0.748 V
Rs = 0.0293 Ohms
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
0
1
2
3
4
5
6
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BYQ28
IF(AV) / A
PF / W
Ths(max) / C
150
144.3
138.6
132.9
127.2
121.5
115.8
Vo = 0.748 V
Rs = 0.0293 Ohms
August 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28X series
ultrafast
Fig.7. Maximum t
rr
at T
j
= 25 C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=5A
0.1
1.0
10
100
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF=5A
IF=2A
IF=1A
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=5A
IF=1A
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-hs (K/W)
P
tp
t
D
with heatsink compound
without heatsink compound
0
1
15
10
5
0
0.5
VF / V
1.5
IF / A
typ
max
Tj=150C
Tj=25C
BYQ28
August 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
August 1996
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYQ28X series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.000
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