DATA SHEET
Product specification
Supersedes data of 1998 Apr 06
1999 Aug 16
DISCRETE SEMICONDUCTORS
BLS3135-50
Microwave power transistor
book, halfpage
M3D259
1999 Aug 16
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
FEATURES
Suitable for short and medium pulse applications
Internal input and output matching networks for an easy
circuit design
Emitter ballasting resistors improve ruggedness
Gold metallization ensures excellent reliability
Interdigitated emitter-base structure provides high
emitter efficiency
Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN
DESCRIPTION
1
collector
2
emitter
3
base; connected to flange
Fig.1 Simplified outline.
handbook, halfpage
1
2
3
3
MBK051
QUICK REFERENCE DATA
RF performance at T
h
= 25
C in a common base class-C test circuit.
MODE OF OPERATION
f
(GHz)
V
CB
(V)
P
L
(W)
G
p
(dB)
C
(%)
Pulsed, class-C
3.1 to 3.5
40
50
typ. 8
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Aug 16
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20
m
spotsize at hotspot.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
h
= 25
C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
75
V
V
CES
collector-emitter voltage
R
BE
= 0
-
75
V
V
EBO
emitter-base voltage
open collector
-
2
V
I
CM
peak collector current
t
p
100
s;
10%
-
6
A
P
tot
total power dissipation
t
p
= 100
s;
= 10%; T
mb
= 25
C
-
80
W
T
stg
storage temperature
-
65
+200
C
T
j
operating junction temperature
-
200
C
T
sld
soldering temperature
up to 0.2 mm from ceramic cap;
t
10 s
-
235
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Z
th j-h
thermal impedance from junction to heatsink
t
p
= 100
s;
= 10%; note 1
0.71
K/W
t
p
= 300
s;
= 10%; note 1
0.99
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
I
C
= 15 mA; open emitter
75
-
V
V
(BR)CES
collector-emitter breakdown voltage I
C
= 15 mA; V
BE
= 0
75
-
V
I
CBO
collector leakage current
V
CB
= 40 V; I
E
= 0
-
1.5
mA
I
CES
collector leakage current
V
CE
= 40 V; V
BE
= 0
-
3
mA
I
EBO
emitter leakage current
V
EB
= 1.5 V; I
C
= 0
-
0.3
mA
h
FE
DC current gain
V
CB
= 5 V; I
C
= 1.5 A
40
-
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
C
(%)
Class-C; t
p
= 100
s;
= 10%
3.1 to 3.5
40
50
typ. 55
7
typ. 8
35
typ. 40
1999 Aug 16
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
V
CB
= 40 V; class-C; t
p
= 100
s;
= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.2
Load power as a function of drive power;
typical values.
handbook, halfpage
0
2
PD (W)
PL
(W)
10
80
60
20
0
40
4
6
8
MCD758
(2)
(3)
(3)
(1)
Fig.3
Power gain as a function of load
power; typical values.
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100
s;
= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
(3)
(1)
(2)
Gp
(dB)
20
40
80
10
-
2
2
4
8
0
6
60
PL (W)
MCD759
Fig.4
Collector efficiency as a function of load
power; typical values.
V
CB
= 40 V; class-C; t
p
= 100
s;
= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
C
(%)
20
PL (W)
40
80
50
0
40
60
30
20
10
MCD760
(3)
(1)
(2)
Fig.5
Power gain and input return losses as
functions of frequency; typical values.
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100
s;
= 10%.
handbook, halfpage
3.0
3.5
20
0
4
8
12
16
10
0
2
4
6
8
3.1
Gp
(dB)
f (GHz)
3.2
Gp
3.3
Return
Losses
(dB)
3.4
MCD761
Return
Losses
1999 Aug 16
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
handbook, full pagewidth
MCD762
30
30
40
output
input
C1
C2
Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
r
= 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = C2 = ATC 100A 5.1 pF
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