Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 500 V/ 600 V/ 700 V /
Fast switching
800 V
Soft recovery characteristic
Reverse surge capability
V
F
1.5 V
High thermal cycling performance
Low thermal resistance
I
F(AV)
= 8 A
t
rr
75 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYR29 series is supplied in the
conventional
leaded
SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYR29
-500
-600
-700
-800
V
RRM
Peak repetitive reverse voltage
-
500
600
700
800
V
V
RWM
Crest working reverse voltage
-
500
600
700
800
V
V
R
Continuous reverse voltage
-
500
600
700
800
V
I
F(AV)
Average forward current
1
square wave;
-
8
A
= 0.5;
T
mb
115 C
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
16
A
T
mb
115 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; with
reapplied V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2.5
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
1
2
1
tab
2
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
1.07
1.50
V
I
F
= 20 A
-
1.75
1.95
V
I
R
Reverse current
V
R
= V
RRM
-
1.0
10
A
V
R
= V
RRM
; T
j
= 100 C
-
0.1
0.2
mA
Q
s
Reverse recovery charge
I
F
= 2 A to V
R
30 V;
-
150
200
nC
dI
F
/dt = 20 A/
s
t
rr
Reverse recovery time
I
F
= 1 A to V
R
30 V;
-
60
75
ns
dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A to V
R
30 V;
-
-
6
A
dI
F
/dt = 50 A/
s; T
j
= 100 C
V
fr
Forward recovery voltage
I
F
= 10 A; dI
F
/dt = 10 A/
s
-
5.0
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
2
4
6
8
10
12
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
137.5
125
100
112.5
Vo = 1.26 V
Rs = 0.03 Ohms
D =
t
p
t
p
T
T
t
I
time
time
V F
V
fr
V F
I
F
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
130
140
120
Vo = 1.26 V
Rs = 0.03 Ohms
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
Fig.5. Maximum t
rr
at T
j
= 25C and 100C.
Fig.6. Maximum I
rrm
at T
j
= 25C and 100C.
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100 C
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
BYR29
VF / V
IF / A
max
typ
Tj = 25 C
Tj = 150 C
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100 C
1.0
10
100
-dIF/dt (A/us)
10
100
1000
Qs / nC
2 A
IF = 10A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV29
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
1
2
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.300
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