Document Outline
- FEATURES
- SYMBOL
- QUICK REFERENCE DATA
- GENERAL DESCRIPTION
- PINNING
- LIMITING VALUES
- THERMAL RESISTANCES
- ELECTRICAL CHARACTERISTICS
- PACKAGE OUTLINE
- MOUNTING INSTRUCTIONS
- DEFINITIONS
Philips Semiconductors
Product specification
Rectifier diodes
BYV118, BYV118B series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 35 V/ 40 V/ 45 V
Fast switching
Reverse surge capability
I
O(AV)
= 10 A
High thermal cycling performance
Low thermal resistance
V
F
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118 series is supplied in the SOT78 conventional leaded package.
The BYV118B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV118-
35
40
45
BYV118B-
35
40
45
V
RRM
Peak repetitive reverse
-
35
40
45
V
voltage
V
RWM
Working peak reverse
-
35
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb
108 C
-
35
40
45
V
I
O(AV)
Average rectified forward
square wave;
= 0.5;
-
10
A
current (both diodes
T
mb
127 C
conducting)
I
FRM
Repetitive peak forward
square wave;
= 0.5;
-
10
A
current (per diode)
T
mb
127 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T
j
= 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 pckage.
k
a1
a2
1
3
2
1
3
tab
2
1 2 3
tab
May 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV118, BYV118B series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
4.5
K/W
to mounting base
both diodes
-
-
3
K/W
R
th j-a
Thermal resistance junction
SOT78 package in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage per diode
I
F
= 5 A; T
j
= 125C
-
0.52
0.6
V
I
F
= 10 A
-
0.72
0.87
V
I
R
Reverse current per diode
V
R
= V
RWM
-
0.06
0.5
mA
V
R
= V
RWM
; T
j
= 100C
-
6
15
mA
C
d
Junction capacitance per
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
-
155
-
pF
diode
May 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV118, BYV118B series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
D = 1.0
0.5
0.2
0.1
PBYR1045CTD
Rs = 0.034 Ohms
Vo = 0.43 V
T
I
D =
t
p
t
p
T
t
Tmb(max) / C
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
155.5
141
146.5
132
137.5
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR645CT
50 C
75 C
100 C
Tj = 25 C
125 C
0
1
2
3
4
5
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
PBYR1045CTD
Rs = 0.034 Ohms
Vo = 0.43 V
Tmb(max) / C
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
155.5
141
146.5
132
137.5
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR645CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
BYV118
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
BYV118
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
May 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV118, BYV118B series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
May 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV118, BYV118B series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.9. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
May 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV118, BYV118B series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1998
6
Rev 1.300
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