Document Outline
- FEATURES
- SYMBOL
- QUICK REFERENCE DATA
- GENERAL DESCRIPTION
- PINNING
- LIMITING VALUES
- THERMAL RESISTANCES
- ELECTRICAL CHARACTERISTICS
- PACKAGE OUTLINE
- MOUNTING INSTRUCTIONS
- DEFINITIONS
Philips Semiconductors
Product specification
Rectifier diodes
BYV143, BYV143B series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 35 V/ 40 V/ 45 V
Fast switching
Reverse surge capability
I
O(AV)
= 30 A
High thermal cycling performance
Low thermal resistance
V
F
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV143 series is supplied in the SOT78 conventional leaded package.
The BYV143B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV143-
35
40
45
BYV143B-
35
40
45
V
RRM
Peak repetitive reverse
-
35
40
45
V
voltage
V
RWM
Working peak reverse
-
35
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb
110 C
-
35
40
45
V
I
O(AV)
Average rectified forward
square wave;
= 0.5;
-
30
A
current (both diodes
T
mb
116 C
conducting)
I
FRM
Repetitive peak forward
square wave;
= 0.5;
-
30
A
current (per diode)
T
mb
116 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
180
A
current per diode
t = 8.3 ms
-
200
A
sinusoidal; T
j
= 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
2
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 pckage.
k
a1
a2
1
3
2
1
3
tab
2
1 2 3
tab
June 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143, BYV143B series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
2.3
K/W
to mounting base
both diodes
-
-
1.4
K/W
R
th j-a
Thermal resistance junction
SOT78 package in free air
-
60
-
K/W
to ambient
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage per diode
I
F
= 15 A; T
j
= 125C
-
0.55
0.6
V
I
F
= 20 A
-
0.65
0.77
V
I
R
Reverse current per diode
V
R
= V
RWM
-
0.22
1.5
mA
V
R
= V
RWM
; T
j
= 100C
-
15
30
mA
C
d
Junction capacitance per
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
-
450
-
pF
diode
June 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143, BYV143B series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
0
5
10
15
20
25
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYV143
Rs = 0.013 Ohms
Vo = 0.404 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
138.5
127
115.5
T
I
D =
t
p
t
p
T
t
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR3045WT
50 C
75 C
100 C
125 C
Tj = 25 C
0
5
10
15
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYV143
Rs = 0.013 Ohms
Vo = 0.404 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
138.5
127
115.5
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR745
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
BYV143
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
BYV143
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
June 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143, BYV143B series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
June 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV143, BYV143B series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.9. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
June 1998
5
Rev 1.100
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