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Электронный компонент: BYV27-600

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DATA SHEET
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24
DISCRETE SEMICONDUCTORS
BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
handbook, 2 columns
M3D116
1997 Nov 24
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYV27-50
-
50
V
BYV27-100
-
100
V
BYV27-150
-
150
V
BYV27-200
-
200
V
BYV27-300
-
300
V
BYV27-400
-
400
V
BYV27-500
-
500
V
BYV27-600
-
600
V
V
R
continuous reverse voltage
BYV27-50
-
50
V
BYV27-100
-
100
V
BYV27-150
-
150
V
BYV27-200
-
200
V
BYV27-300
-
300
V
BYV27-400
-
400
V
BYV27-500
-
500
V
BYV27-600
-
600
V
I
F(AV)
average forward current
T
tp
= 85
C; lead length = 10 mm;
see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-50 to 200
-
2.0
A
BYV27-300 and 400
-
1.9
A
BYV27-500 and 600
-
1.6
A
I
F(AV)
average forward current
T
amb
= 60
C; printed-circuit board
mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-50 to 200
-
1.30
A
BYV27-300 and 400
-
1.25
A
BYV27-500 and 600
-
1.10
A
1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 85
C; see Figs 8, 9 and 10
BYV27-50 to 400
-
20
A
BYV27-500 and 600
-
16
A
I
FRM
repetitive peak forward current
T
amb
= 60
C;
see Figs 11, 12 and 13
BYV27-50 to 200
-
14
A
BYV27-300 and 400
-
13
A
BYV27-500 and 600
-
11
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
BYV27-50 to 400
-
50
A
BYV27-500 and 600
-
40
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
20
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig. 17
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 2 A; T
j
= T
j max
;
see Figs 18, 19 and 20
BYV27-50 to 200
-
-
0.78
V
BYV27-300 and 400
-
-
0.82
V
BYV27-500 and 600
-
-
1.00
V
V
F
forward voltage
I
F
= 2 A;
see Figs 18, 19 and 20
BYV27-50 to 200
-
-
0.98
V
BYV27-300 and 400
-
-
1.05
V
BYV27-500 and 600
-
-
1.25
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYV27-50
55
-
-
V
BYV27-100
110
-
-
V
BYV27-150
165
-
-
V
BYV27-200
220
-
-
V
BYV27-300
330
-
-
V
BYV27-400
440
-
-
V
BYV27-500
560
-
-
V
BYV27-600
675
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig. 21
-
-
5
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig. 21
-
-
150
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig. 25.
For more information please refer to the
"General Part of associated Handbook".
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 27
BYV27-50 to 200
-
-
25
ns
BYV27-300 to 600
-
-
50
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0;
see Figs 22, 23 and 24
BYV27-50 to 200
-
100
-
pF
BYV27-300 and 400
-
80
-
pF
BYV27-500 and 600
-
65
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
-
1 A/
s;
see Fig. 26
-
-
4
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1997 Nov 24
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
GRAPHICAL DATA
BYV27-50 to 200
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
MGA849
100
T ( C)
o
tp
0
I F(AV)
(A)
1.6
1.2
0.8
0.4
2.0
20
15
10 lead length (mm)
BYV27-300 and 400
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
MLC293
100
T ( C)
o
tp
0
I F(AV)
(A)
1.6
1.2
0.8
0.4
2.0
lead length 10 mm
Fig.4
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYV27-500 and 600
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
handbook, halfpage
0
200
0
1
2
3
IF(AV)
(A)
100
Ttp (
C)
MGK648
lead length 10 mm
BYV27-50 to 200
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0
MGA848
100
I F(AV)
(A)
T ( C)
amb
o
1.6
1.2
0.8
0.4
2.0