Philips Semiconductors
Product specification
Rectifier diodes
BYV29 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F
1.03 V
High thermal cycling performance
Low thermal resistance
I
F(AV)
= 9 A
t
rr
60 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYV29 series is supplied in the
conventional
leaded
SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV29
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
V
RWM
Crest working reverse voltage
-
300
400
500
V
V
R
Continuous reverse voltage
-
300
400
500
V
I
F(AV)
Average forward current
1
square wave;
= 0.5;
-
9
A
T
mb
123 C
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
18
A
T
mb
123 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current.
t = 8.3 ms
-
110
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2.5
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
1
2
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV29 series
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.90
1.03
V
I
F
= 8 A
-
1.05
1.25
V
I
F
= 20 A
-
1.20
1.40
V
I
R
Reverse current
V
R
= V
RRM
-
2.0
50
A
V
R
= V
RRM
; T
j
= 100 C
-
0.1
0.35
mA
Q
s
Reverse recovery charge
I
F
= 2 A to V
R
30 V;
-
40
60
nC
dI
F
/dt = 20 A/
s
t
rr
Reverse recovery time
I
F
= 1 A to V
R
30 V;
-
50
60
ns
dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A to V
R
30 V;
-
4.0
5.5
A
dI
F
/dt = 50 A/
s; T
j
= 100C
V
fr
Forward recovery voltage
I
F
= 10 A; dI
F
/dt = 10 A/
s
-
2.5
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
5
10
15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
137.5
125
112.5
time
time
V F
V
fr
V F
I
F
0
2
4
6
8
10
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV29 series
ultrafast
Fig.5. Maximum t
rr
at T
j
= 25C and 100C
Fig.6. Maximum I
rrm
at T
j
= 25C and 100C.
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25C
Fig.9. Transient thermal impedance Z
th j-mb
= f(t
p
)
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100C
0
1
2
30
20
10
0
typ
max
IF / A
0.5
1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100C
1
10
100
1000
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF = 10 A
2 A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV29
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV29 series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
1
2
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV29 series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.300
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