Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F
1.03 V
High thermal cycling performance
Isolated mounting tab
I
F(AV)
= 9 A
t
rr
60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode (k)
2
anode (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV29F/BYV29X
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
V
R
Continuous reverse voltage
T
hs
138C
1
-
300
400
500
V
I
F(AV)
Average forward current
2
square wave;
= 0.5;
-
9
A
T
hs
90 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
k
a
1
2
1
2
case
1
2
case
1 T
hs
de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOD100 package; R.H.
65%; clean and
-
-
1500
V
all terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
-
-
2500
V
all terminals to external
sinusoidal waveform; R.H.
65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 2 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.5
K/W
heatsink
without heatsink compound
-
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.90
1.03
V
I
F
= 8 A
-
1.05
1.25
V
I
F
= 20 A
-
1.20
1.40
V
I
R
Reverse current
V
R
= V
RRM
-
2.0
50
A
V
R
= V
RRM
; T
j
= 100 C
-
0.1
0.35
mA
Q
s
Reverse recovery charge
I
F
= 2 A to V
R
30 V;
-
40
60
nC
dI
F
/dt = 20 A/
s
t
rr
Reverse recovery time
I
F
= 1 A to V
R
30 V;
-
50
60
ns
dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A to V
R
30 V;
-
4.0
5.5
A
dI
F
/dt = 50 A/
s; T
j
= 100C
V
fr
Forward recovery voltage
I
F
= 10 A; dI
F
/dt = 10 A/
s
-
2.5
-
V
February 1999
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25C and 100C
Fig.6. Maximum I
rrm
at T
j
= 25C and 100C.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
2
4
6
8
10
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W
Ths(max) / C
150
139
128
117
106
95
84
time
time
V F
V
fr
V F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100C
0
5
10
15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
122.5
95
67.5
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100C
February 1999
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25C
Fig.9. Transient thermal impedance Z
th j-hs
= f(t
p
)
0
1
2
30
20
10
0
typ
max
IF / A
0.5
1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV29F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
1
10
100
1000
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF = 10 A
2 A
February 1999
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M
0.4
top view
3.5 max
not tinned
4.4
k
a
February 1999
5
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
February 1999
6
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
BYV29F, BYV29X series
ultrafast
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
7
Rev 1.400
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