Philips Semiconductors
Product specification
Rectifier diodes
BYV32 series
ultrafast
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency dual
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
BYV32-
100
150
200
ultra-fast recovery times and soft
V
RRM
Repetitive peak reverse
100
150
200
V
recovery characteristic. They are
voltage
intended for use in switched mode
V
F
Forward voltage
0.85
0.85
0.85
V
power supplies and high frequency
I
O(AV)
Output current (both
20
20
20
A
circuits
in
general
where
low
diodes conducting)
conduction and switching losses are
t
rr
Reverse recovery time
25
25
25
ns
essential.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
V
RWM
Crest working reverse voltage
-
100
150
200
V
V
R
Continuous reverse voltage
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave
-
20
A
conducting)
1
= 0.5; T
mb
115 C
sinusoidal
-
18
A
a = 1.57; T
mb
118 C
I
O(RMS)
RMS forward current
-
28
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
20
A
per diode
T
mb
115 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
125
A
current per diode
t = 8.3 ms
-
137
A
sinusoidal; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
78
A
2
s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1 2 3
tab
k
a1
a2
1 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV32 series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
2.4
K/W
mounting base
both diodes conducting
-
-
1.6
K/W
R
th j-a
Thermal resistance junction to
in free air
-
60
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 8 A; T
j
= 150C
-
0.72
0.85
V
I
F
= 20 A
-
1.00
1.15
V
I
R
Reverse current (per diode)
V
R
= V
RWM
; T
j
= 100 C
-
0.2
0.6
mA
V
R
= V
RWM
-
6
30
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
8
12.5
nC
diode)
t
rr
Reverse recovery time (per
I
F
= 1 A; V
R
30 V;
-
20
25
ns
diode)
-dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 1 A; V
R
30 V;
-
1.5
2
A
(per diode)
-dI
F
/dt = 50 A/
s; T
j
= 100 C
V
fr
Forward recovery voltage (per
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
diode)
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV32 series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25 C; per diode
Fig.6. Maximum t
rr
at T
j
= 100 C; per diode
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
2
4
6
8
10
0
2
4
6
8
10
1.9
2.2
2.8
4
BYV32
IF(AV) / A
PF / W
a = 1.57
Tmb(max) / C
150
145.2
140.4
135.6
130.8
126
Vo = 0.7 V
Rs = 0.0183 Ohms
time
time
V
F
V
fr
V
F
I
F
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
0
5
10
15
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYV32
IF(AV) / A
PF / W
Tmb(max) / C
150
138
126
114
Vo = 0.7 V
Rs = 0.0183 Ohms
D =
t
p
t
p
T
T
t
I
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=10A
IF=1A
Tj = 100 C
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
BYV32 series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. TO220AB; pin 2 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1994
5
Rev 1.100
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