Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
0.85 V
Reverse surge capability
High thermal cycling performance
I
O(AV)
= 12 A
Isolated mounting tab
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32F series is supplied in the SOT186 package.
The BYV32EX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV32F / BYV32EX
-150
-200
V
RRM
Peak repetitive reverse voltage
-
150
200
V
V
RWM
Crest working reverse voltage
-
150
200
V
V
R
Continuous reverse voltage
-
150
200
V
I
O(AV)
Average rectified output current square wave
-
12
A
(both diodes conducting)
1
= 0.5; T
hs
95 C
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
20
A
per diode
T
hs
95 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
125
A
current per diode
t = 8.3 ms
-
137
A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
k
a1
a2
1
3
2
1 2 3
case
1 2 3
case
1 Neglecting switching and reverse current losses
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
SOT186A package; f = 50-60 Hz;
-
2500
V
three terminals to external
sinusoidal waveform; R.H.
65%;
heatsink
clean and dustfree
V
isol
Repetitive peak voltage from all
SOT186 package; R.H.
65%;
-
1500
V
three terminals to external
clean and dustfree
heatsink
C
isol
Capacitance from pin 2 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.0
K/W
heatsink (per diode)
without heatsink compound
-
-
7.0
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.72
0.85
V
I
F
= 20 A
-
1.00
1.15
V
I
R
Reverse current
V
R
= V
RWM
; T
j
= 100 C
-
0.2
0.6
mA
V
R
= V
RWM
-
6
30
A
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
8
12.5
nC
t
rr1
Reverse recovery time
I
F
= 1 A; V
R
30 V;
-
20
25
ns
-dI
F
/dt = 100 A/
s
t
rr2
Reverse recovery time
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
10
20
ns
I
rrm
Peak reverse recovery current
I
F
= 1 A; V
R
30 V;
-
1.5
2
A
-dI
F
/dt = 50 A/
s; T
j
= 100C
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V F
V
fr
V F
I
F
0
5
10
15
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYV32
IF(AV) / A
PF / W
Ths(max) / C
150
125
100
75
Vo = 0.7 V
Rs = 0.0183 Ohms
D =
t
p
t
p
T
T
t
I
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
0
2
4
6
8
10
0
2
4
6
8
10
1.9
2.2
2.8
4
BYV32
IF(AV) / A
PF / W
a = 1.57
Ths(max) / C
150
140
130
120
110
100
Vo = 0.7 V
Rs = 0.0183 Ohms
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV32F/EX
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
0
1
30
20
10
0
0.5
1.5
VF / V
IF / A
typ
max
Tj=150 C
Tj=25 C
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
1
2
3
M
0.4
top view
3.5 max
not tinned
4.4
October 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
October 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYV32F, BYV32EX series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
7
Rev 1.300
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