DATA SHEET
Product specification
Supersedes data of 1996 May 30
1996 Jul 01
DISCRETE SEMICONDUCTORS
BYV36 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D116
1996 Jul 01
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYV36A
-
200
V
BYV36B
-
400
V
BYV36C
-
600
V
BYV36D
-
800
V
BYV36E
-
1000
V
BYV36F
-
1200
V
BYV36G
-
1400
V
V
R
continuous reverse voltage
BYV36A
-
200
V
BYV36B
-
400
V
BYV36C
-
600
V
BYV36D
-
800
V
BYV36E
-
1000
V
BYV36F
-
1200
V
BYV36G
-
1400
V
I
F(AV)
average forward current
T
tp
= 60
C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYV36A to C
-
1.6
A
BYV36D and E
-
1.5
A
BYV36F and G
-
1.5
A
I
F(AV)
average forward current
T
amb
= 60
C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
BYV36A to C
-
0.87
A
BYV36D and E
-
0.81
A
BYV36F and G
-
0.81
A
1996 Jul 01
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
I
FRM
repetitive peak forward current
T
tp
= 60
C; see Figs 8; 9 and 10
BYV36A to C
-
18
A
BYV36D and E
-
17
A
BYV36F and G
-
15
A
I
FRM
repetitive peak forward current
T
amb
= 60
C; see Figs 11; 12 and 13
BYV36A to C
-
9
A
BYV36D and E
-
8
A
BYV36F and G
-
8
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
-
30
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Figs 17 and 18
-
65
+175
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
;
see Figs 19; 20 and 21
BYV36A to C
-
-
1.00
V
BYV36D and E
-
-
1.05
V
BYV36F and G
-
-
1.05
V
V
F
forward voltage
I
F
= 1 A;
see Figs 19; 20 and 21
BYV36A to C
-
-
1.35
V
BYV36D and E
-
-
1.45
V
BYV36F and G
-
-
1.45
V
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 0.1 mA
BYV36A
300
-
-
V
BYV36B
500
-
-
V
BYV36C
700
-
-
V
BYV36D
900
-
-
V
BYV36E
1100
-
-
V
BYV36F
1300
-
-
V
BYV36G
1500
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.22
-
-
5
A
V
R
= V
RRMmax
;
T
j
= 165
C; see Fig.22
-
-
150
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Jul 01
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.25.
For more information please refer to the
"General Part of associated Handbook".
t
rr
reverse recovery time
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 26
BYV36A to C
-
-
100
ns
BYV36D and E
-
-
150
ns
BYV36F and G
-
-
250
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Figs 23 and 24
BYV36A to C
-
45
-
pF
BYV36D and E
-
40
-
pF
BYV36F and G
-
35
-
pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
30 V and
dI
F
/dt =
-
1 A/
s;
see Fig.27
BYV36A to C
-
-
7
A/
s
BYV36D and E
-
-
6
A/
s
BYV36F and G
-
-
5
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
1996 Jul 01
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
GRAPHICAL DATA
BYV36A to C
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
0
200
1.6
0
MSA867
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
20 15
10
lead length (mm)
BYV36D and E
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.3
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
0
200
1.6
0
MSA866
0.4
100
T tp ( C)
o
I F(AV)
(A)
0.8
1.2
20 15
10
lead length (mm)
BYV36F and G
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.4
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0
200
2.0
0
0.4
1.6
MBD419
100
I F(AV)
(A)
T ( C)
o
tp
0.8
1.2
lead length 10 mm
BYV36A to C
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
handbook, halfpage
0
200
1.2
0
MSA865
0.4
100
T
( C)
o
I F(AV)
(A)
amb
0.8
PDF 
ZIP