Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
0.85 V
Reverse surge capability
High thermal cycling performance
I
O(AV)
= 30 A
Low thermal resistance
I
RRM
= 0.2 A
t
rr
28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV42E / BYV42EB
-150
-200
V
RRM
Peak repetitive reverse voltage
-
150
200
V
V
RWM
Crest working reverse voltage
-
150
200
V
V
R
Continuous reverse voltage
T
mb
144C
-
150
200
V
I
O(AV)
Average rectified output current square wave
-
30
A
(both diodes conducting)
= 0.5; T
mb
108 C
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
mb
108 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
k
a1
a2
1
3
2
1
3
tab
2
1 2 3
tab
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
2.4
K/W
mounting base
both diodes
-
-
1.4
K/W
R
th j-a
Thermal resistance junction to
SOT78 package, in free air
-
60
-
K/W
ambient
SOT404 and SOT428 packages,
-
50
-
K/W
pcb mounted, minimum footprint,
FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 15 A; T
j
= 150C
-
0.78
0.85
V
I
F
= 15 A
-
0.95
1.05
V
I
F
= 30 A
-
1.00
1.20
V
I
R
Reverse current
V
R
= V
RWM
; T
j
= 100 C
-
0.5
1
mA
V
R
= V
RWM
-
10
100
A
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
6
15
nC
t
rr1
Reverse recovery time
I
F
= 1 A; V
R
30 V;
-
20
28
ns
-dI
F
/dt = 100 A/
s
t
rr2
Reverse recovery time
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
13
22
ns
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V F
V
fr
V F
I
F
0
5
10
15
20
25
0
5
10
15
20
0.5
0.2
0.1
BYV42
IF(AV) / A
PF / W
D = 1.0
Tmb(max) / C
150
138
126
114
102
Vo = 0.705 V
Rs = 0.0097 Ohms
D =
t
p
t
p
T
T
t
I
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
0
5
10
15
0
5
10
15
1.9
2.2
2.8
4
BYV42
IF(AV) / A
PF / W
Tmb(max) / C
150
138
126
114
a = 1.57
Vo = 0.705 V
Rs = 0.0097 Ohms
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=20A
100
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=20A
10A
5A
2A
1A
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=20A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV42E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
VF / V
50
40
30
20
10
0
0.5
1.5
1.0
Tj = 150 C
Tj = 25 C
IF / A
max
typ
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
7
Rev 1.200
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